Strong electron correlation effects in non-volatile electronic memory devices

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We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transi...

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Detalles Bibliográficos
Autor principal: Rozenberg, Marcelo Javier
Publicado: 2005
Materias:
Computational methods
Electric insulators
Electronic equipment
Interfaces (computer)
Mathematical models
Sandwich structures
Semiconductor materials
Switching systems
Correlated electron devices
Domain-tunneling (DT)
Non volatile memory devices
Semiconductor/metal interfaces
Data storage equipment
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue
http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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