Strong electron correlation effects in non-volatile electronic memory devices

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We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transi...

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Detalles Bibliográficos
Autor principal: Rozenberg, Marcelo Javier
Publicado: 2005
Materias:
Computational methods
Electric insulators
Electronic equipment
Interfaces (computer)
Mathematical models
Sandwich structures
Semiconductor materials
Switching systems
Correlated electron devices
Domain-tunneling (DT)
Non volatile memory devices
Semiconductor/metal interfaces
Data storage equipment
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue
http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue
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Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
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spelling paper:paper_NIS03824_v_n_p131_Inoue2023-06-08T16:39:30Z Strong electron correlation effects in non-volatile electronic memory devices Rozenberg, Marcelo Javier Computational methods Electric insulators Electronic equipment Interfaces (computer) Mathematical models Sandwich structures Semiconductor materials Switching systems Correlated electron devices Domain-tunneling (DT) Non volatile memory devices Semiconductor/metal interfaces Data storage equipment We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device. © 2005 IEEE. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2005 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Computational methods
Electric insulators
Electronic equipment
Interfaces (computer)
Mathematical models
Sandwich structures
Semiconductor materials
Switching systems
Correlated electron devices
Domain-tunneling (DT)
Non volatile memory devices
Semiconductor/metal interfaces
Data storage equipment
spellingShingle Computational methods
Electric insulators
Electronic equipment
Interfaces (computer)
Mathematical models
Sandwich structures
Semiconductor materials
Switching systems
Correlated electron devices
Domain-tunneling (DT)
Non volatile memory devices
Semiconductor/metal interfaces
Data storage equipment
Rozenberg, Marcelo Javier
Strong electron correlation effects in non-volatile electronic memory devices
topic_facet Computational methods
Electric insulators
Electronic equipment
Interfaces (computer)
Mathematical models
Sandwich structures
Semiconductor materials
Switching systems
Correlated electron devices
Domain-tunneling (DT)
Non volatile memory devices
Semiconductor/metal interfaces
Data storage equipment
description We propose a theoretical domain-tunneling (DT) model of the resistance switching phenomenon that is often experimentally observed in metal-semiconductor-metal sandwich structures which is considered as a possible non-volatile memory devices. The DT model is incorporated with a metal-insulator transition due to strong electron correlations at the semiconductor/metal interface. We have also prepared experimentally a Pt/NiO/Pt test device and have observed the resistance switching. The calculated results of the DT model are compared to the experimental results, manifesting that this sandwich structure could be the realisation of a novel strongly correlated electron device. © 2005 IEEE.
author Rozenberg, Marcelo Javier
author_facet Rozenberg, Marcelo Javier
author_sort Rozenberg, Marcelo Javier
title Strong electron correlation effects in non-volatile electronic memory devices
title_short Strong electron correlation effects in non-volatile electronic memory devices
title_full Strong electron correlation effects in non-volatile electronic memory devices
title_fullStr Strong electron correlation effects in non-volatile electronic memory devices
title_full_unstemmed Strong electron correlation effects in non-volatile electronic memory devices
title_sort strong electron correlation effects in non-volatile electronic memory devices
publishDate 2005
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_NIS03824_v_n_p131_Inoue
http://hdl.handle.net/20.500.12110/paper_NIS03824_v_n_p131_Inoue
work_keys_str_mv AT rozenbergmarcelojavier strongelectroncorrelationeffectsinnonvolatileelectronicmemorydevices
_version_ 1769175847675101184

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