Radiation effects on high-k dielectrics. Measurement technique and first results

The radiation response of MOS capacitors with HfO2 as insulator was investigated. The development of instrumental for such goal is presented. First results and analysis are presented.

Guardado en:
Detalles Bibliográficos
Publicado: 2010
Materias:
High-K dielectrics
MOS
Radiation effects
High-k dielectric
Measurement techniques
Radiation response
Hafnium compounds
MOS capacitors
Nanoelectronics
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p66_Salomone
http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p66_Salomone
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_97898716_v_n_p66_Salomone
record_format dspace
spelling paper:paper_97898716_v_n_p66_Salomone2023-06-08T16:39:15Z Radiation effects on high-k dielectrics. Measurement technique and first results High-K dielectrics MOS Radiation effects High-k dielectric Measurement techniques MOS Radiation response Hafnium compounds MOS capacitors Nanoelectronics Radiation effects The radiation response of MOS capacitors with HfO2 as insulator was investigated. The development of instrumental for such goal is presented. First results and analysis are presented. 2010 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p66_Salomone http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p66_Salomone
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic High-K dielectrics
MOS
Radiation effects
High-k dielectric
Measurement techniques
MOS
Radiation response
Hafnium compounds
MOS capacitors
Nanoelectronics
Radiation effects
spellingShingle High-K dielectrics
MOS
Radiation effects
High-k dielectric
Measurement techniques
MOS
Radiation response
Hafnium compounds
MOS capacitors
Nanoelectronics
Radiation effects
Radiation effects on high-k dielectrics. Measurement technique and first results
topic_facet High-K dielectrics
MOS
Radiation effects
High-k dielectric
Measurement techniques
MOS
Radiation response
Hafnium compounds
MOS capacitors
Nanoelectronics
Radiation effects
description The radiation response of MOS capacitors with HfO2 as insulator was investigated. The development of instrumental for such goal is presented. First results and analysis are presented.
title Radiation effects on high-k dielectrics. Measurement technique and first results
title_short Radiation effects on high-k dielectrics. Measurement technique and first results
title_full Radiation effects on high-k dielectrics. Measurement technique and first results
title_fullStr Radiation effects on high-k dielectrics. Measurement technique and first results
title_full_unstemmed Radiation effects on high-k dielectrics. Measurement technique and first results
title_sort radiation effects on high-k dielectrics. measurement technique and first results
publishDate 2010
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97898716_v_n_p66_Salomone
http://hdl.handle.net/20.500.12110/paper_97898716_v_n_p66_Salomone
_version_ 1769175811854696448

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