Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation

MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE.

Guardado en:
Detalles Bibliográficos
Publicado: 2011
Materias:
High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
Radiation effects
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814577_v_n_p67_Quinteros
http://hdl.handle.net/20.500.12110/paper_97814577_v_n_p67_Quinteros
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_97814577_v_n_p67_Quinteros
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spelling paper:paper_97814577_v_n_p67_Quinteros2023-06-08T16:37:36Z Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation High-K gate dielectrics MOS devices Radiation Effects C-V curve Capacitive structure Comparative analysis High-k dielectric High-k gate dielectrics Dielectric materials MOS devices Radiation effects MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE. 2011 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814577_v_n_p67_Quinteros http://hdl.handle.net/20.500.12110/paper_97814577_v_n_p67_Quinteros
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
MOS devices
Radiation effects
spellingShingle High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
MOS devices
Radiation effects
Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
topic_facet High-K gate dielectrics
MOS devices
Radiation Effects
C-V curve
Capacitive structure
Comparative analysis
High-k dielectric
High-k gate dielectrics
Dielectric materials
MOS devices
Radiation effects
description MIS capacitive structures were studied under gamma, 16O and p radiation. The effects observed were registered employing C-V curves. Those showed different characteristics depending on the type of radiation and dielectric. © 2011 IEEE.
title Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_short Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_full Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_fullStr Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_full_unstemmed Comparative analysis of MIS capacitive structures with high-K dielectrics under gamma, 16O and p radiation
title_sort comparative analysis of mis capacitive structures with high-k dielectrics under gamma, 16o and p radiation
publishDate 2011
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_97814577_v_n_p67_Quinteros
http://hdl.handle.net/20.500.12110/paper_97814577_v_n_p67_Quinteros
_version_ 1768544934827130880

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