Ferroelectric Tunnel Junction for Dense Cross-Point Arrays
Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memr...
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paper:paper_19448244_v7_n40_p22348_Lee2023-06-08T16:32:27Z Ferroelectric Tunnel Junction for Dense Cross-Point Arrays Rozenberg, Marcelo Javier cross point array structure ferroelectric tunnel junction memristor perovskite manganite family sneak current Barium compounds Calcium Ferroelectricity Flash memory Manganese oxide Memristors Passive filters Thermionic emission Cross-point array Ferroelectric tunnel junctions Memristor Perovskite manganites Sneak currents Tunnel junctions Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. © 2015 American Chemical Society. Fil:Rozenberg, M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2015 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_19448244_v7_n40_p22348_Lee http://hdl.handle.net/20.500.12110/paper_19448244_v7_n40_p22348_Lee |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
cross point array structure ferroelectric tunnel junction memristor perovskite manganite family sneak current Barium compounds Calcium Ferroelectricity Flash memory Manganese oxide Memristors Passive filters Thermionic emission Cross-point array Ferroelectric tunnel junctions Memristor Perovskite manganites Sneak currents Tunnel junctions |
| spellingShingle |
cross point array structure ferroelectric tunnel junction memristor perovskite manganite family sneak current Barium compounds Calcium Ferroelectricity Flash memory Manganese oxide Memristors Passive filters Thermionic emission Cross-point array Ferroelectric tunnel junctions Memristor Perovskite manganites Sneak currents Tunnel junctions Rozenberg, Marcelo Javier Ferroelectric Tunnel Junction for Dense Cross-Point Arrays |
| topic_facet |
cross point array structure ferroelectric tunnel junction memristor perovskite manganite family sneak current Barium compounds Calcium Ferroelectricity Flash memory Manganese oxide Memristors Passive filters Thermionic emission Cross-point array Ferroelectric tunnel junctions Memristor Perovskite manganites Sneak currents Tunnel junctions |
| description |
Cross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism. This study demonstrates suitable characteristics of a ferroelectric tunnel junction (FTJ) for the memristor of the CPA structure using an electrostatic model. From the FTJ of the Au/p-type Pr0.98Ca0.02MnO3 (4 nm)/ BaTiO3 (4.3 nm)/n-type Ca0.98Pr0.02MnO3 (3 nm)/ Pt(111) structure, which has a higher and thicker potential barrier, a good memristive effect for the CPA structure with a high nonlinear current-voltage curve and low current operation, was obtained by Δ Fowler-Nordheim tunneling with effectively blocked direct tunneling and thermionic emission. The FTJ demonstrated reduced sneak current and the possible for high nonlinearity. © 2015 American Chemical Society. |
| author |
Rozenberg, Marcelo Javier |
| author_facet |
Rozenberg, Marcelo Javier |
| author_sort |
Rozenberg, Marcelo Javier |
| title |
Ferroelectric Tunnel Junction for Dense Cross-Point Arrays |
| title_short |
Ferroelectric Tunnel Junction for Dense Cross-Point Arrays |
| title_full |
Ferroelectric Tunnel Junction for Dense Cross-Point Arrays |
| title_fullStr |
Ferroelectric Tunnel Junction for Dense Cross-Point Arrays |
| title_full_unstemmed |
Ferroelectric Tunnel Junction for Dense Cross-Point Arrays |
| title_sort |
ferroelectric tunnel junction for dense cross-point arrays |
| publishDate |
2015 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_19448244_v7_n40_p22348_Lee http://hdl.handle.net/20.500.12110/paper_19448244_v7_n40_p22348_Lee |
| work_keys_str_mv |
AT rozenbergmarcelojavier ferroelectrictunneljunctionfordensecrosspointarrays |
| _version_ |
1768546324130562048 |