Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion
Laser cooling in semiconductors has recently been demonstrated in cadmium sulfide nanobelts (NBs) as well as in organic-inorganic lead halide perovskites. Cooling by as much as 40 K has been shown in CdS nanobelts and by as much as 58 K in hybrid perovskite films. This suggests that further progress...
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2017
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_19327447_v121_n30_p16607_Morozov http://hdl.handle.net/20.500.12110/paper_19327447_v121_n30_p16607_Morozov |
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paper:paper_19327447_v121_n30_p16607_Morozov2023-06-08T16:31:41Z Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion Cadmium sulfide Cooling Defects Laser cooling Nanobelts Organic lasers Perovskite Photoluminescence Semiconductor lasers Semiconductor quantum wells Anti-Stokes emission Anti-Stokes photoluminescence Band-edge emissions Frequency dependent Halide perovskites Longitudinal optical phonons Optical refrigeration Organic-inorganic II-VI semiconductors Laser cooling in semiconductors has recently been demonstrated in cadmium sulfide nanobelts (NBs) as well as in organic-inorganic lead halide perovskites. Cooling by as much as 40 K has been shown in CdS nanobelts and by as much as 58 K in hybrid perovskite films. This suggests that further progress in semiconductor-based optical refrigeration can ultimately lead to solid state cryocoolers capable of achieving sub 10 K temperatures. In CdS, highly efficient photoluminescence (PL) up-conversion has been attributed to efficient exciton-longitudinal optical (LO) phonon coupling. However, the nature of its efficient anti-Stokes emission has not been established. Consequently, developing a detailed understanding about the mechanism leading to efficient PL up-conversion in CdS NBs is essential to furthering the nascent field of semiconductor laser cooling. In this study, we describe a detailed investigation of anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature- and frequency-dependent band edge emission and ASPL spectroscopies conducted on individual belts as well as ensembles suggest that CdS ASPL is defect-mediated via the involvement of donor-acceptor states. © 2017 American Chemical Society. 2017 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_19327447_v121_n30_p16607_Morozov http://hdl.handle.net/20.500.12110/paper_19327447_v121_n30_p16607_Morozov |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Cadmium sulfide Cooling Defects Laser cooling Nanobelts Organic lasers Perovskite Photoluminescence Semiconductor lasers Semiconductor quantum wells Anti-Stokes emission Anti-Stokes photoluminescence Band-edge emissions Frequency dependent Halide perovskites Longitudinal optical phonons Optical refrigeration Organic-inorganic II-VI semiconductors |
| spellingShingle |
Cadmium sulfide Cooling Defects Laser cooling Nanobelts Organic lasers Perovskite Photoluminescence Semiconductor lasers Semiconductor quantum wells Anti-Stokes emission Anti-Stokes photoluminescence Band-edge emissions Frequency dependent Halide perovskites Longitudinal optical phonons Optical refrigeration Organic-inorganic II-VI semiconductors Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion |
| topic_facet |
Cadmium sulfide Cooling Defects Laser cooling Nanobelts Organic lasers Perovskite Photoluminescence Semiconductor lasers Semiconductor quantum wells Anti-Stokes emission Anti-Stokes photoluminescence Band-edge emissions Frequency dependent Halide perovskites Longitudinal optical phonons Optical refrigeration Organic-inorganic II-VI semiconductors |
| description |
Laser cooling in semiconductors has recently been demonstrated in cadmium sulfide nanobelts (NBs) as well as in organic-inorganic lead halide perovskites. Cooling by as much as 40 K has been shown in CdS nanobelts and by as much as 58 K in hybrid perovskite films. This suggests that further progress in semiconductor-based optical refrigeration can ultimately lead to solid state cryocoolers capable of achieving sub 10 K temperatures. In CdS, highly efficient photoluminescence (PL) up-conversion has been attributed to efficient exciton-longitudinal optical (LO) phonon coupling. However, the nature of its efficient anti-Stokes emission has not been established. Consequently, developing a detailed understanding about the mechanism leading to efficient PL up-conversion in CdS NBs is essential to furthering the nascent field of semiconductor laser cooling. In this study, we describe a detailed investigation of anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature- and frequency-dependent band edge emission and ASPL spectroscopies conducted on individual belts as well as ensembles suggest that CdS ASPL is defect-mediated via the involvement of donor-acceptor states. © 2017 American Chemical Society. |
| title |
Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion |
| title_short |
Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion |
| title_full |
Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion |
| title_fullStr |
Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion |
| title_full_unstemmed |
Defect-Mediated CdS Nanobelt Photoluminescence Up-Conversion |
| title_sort |
defect-mediated cds nanobelt photoluminescence up-conversion |
| publishDate |
2017 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_19327447_v121_n30_p16607_Morozov http://hdl.handle.net/20.500.12110/paper_19327447_v121_n30_p16607_Morozov |
| _version_ |
1768542197541502976 |