Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots

In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) a...

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Guardado en:
Detalles Bibliográficos
Publicado: 2010
Materias:
Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15571939_v23_n1_p175_Alcalde
http://hdl.handle.net/20.500.12110/paper_15571939_v23_n1_p175_Alcalde
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_15571939_v23_n1_p175_Alcalde
record_format dspace
spelling paper:paper_15571939_v23_n1_p175_Alcalde2023-06-08T16:23:19Z Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots Quantum dots Spin relaxation Deformation potential Electron phonon Electron-spin relaxation G factors Phonon modulation Quantum Dot Spin flip transitions Spin orbit interactions Spin relaxation Spin-phonon interactions Dynamic positioning Electrons Percolation (solid state) Phonons Semiconductor quantum dots Spin dynamics In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) and piezoelectric (PE) coupling to the spin relaxation. We reveal the importance of an appropriate description of the electron Landé g-factor in the calculation of the rates. Our results demonstrate that, for narrow-gap materials, the DP interaction becomes the dominant one. This behavior is not observed in wide or intermediate gap semiconductors, where the PE coupling, in general, governs the relaxation processes. © 2009 Springer Science+Business Media, LLC. 2010 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15571939_v23_n1_p175_Alcalde http://hdl.handle.net/20.500.12110/paper_15571939_v23_n1_p175_Alcalde
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin relaxation
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
spellingShingle Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin relaxation
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
topic_facet Quantum dots
Spin relaxation
Deformation potential
Electron phonon
Electron-spin relaxation
G factors
Phonon modulation
Quantum Dot
Spin flip transitions
Spin orbit interactions
Spin relaxation
Spin-phonon interactions
Dynamic positioning
Electrons
Percolation (solid state)
Phonons
Semiconductor quantum dots
Spin dynamics
description In this work we calculate the spin-flip transition rates, considering the phonon modulation of the spin-orbit interaction. For this purpose will use the spin-phonon interaction Hamiltonian proposed by Pavlov and Firsov. We compare the contributions of the electron-phonon deformation potential (DP) and piezoelectric (PE) coupling to the spin relaxation. We reveal the importance of an appropriate description of the electron Landé g-factor in the calculation of the rates. Our results demonstrate that, for narrow-gap materials, the DP interaction becomes the dominant one. This behavior is not observed in wide or intermediate gap semiconductors, where the PE coupling, in general, governs the relaxation processes. © 2009 Springer Science+Business Media, LLC.
title Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_short Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_full Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_fullStr Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_full_unstemmed Electron spin relaxation due to phonon modulation of the Rashba interaction in quantum dots
title_sort electron spin relaxation due to phonon modulation of the rashba interaction in quantum dots
publishDate 2010
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15571939_v23_n1_p175_Alcalde
http://hdl.handle.net/20.500.12110/paper_15571939_v23_n1_p175_Alcalde
_version_ 1768546367756566528

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