Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a meth...

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Autores principales:	Levy, Pablo Eduardo, Sánchez, María José, Rozenberg, Marcelo Javier
Publicado:	2014
Materias:	Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15497747_v61_n1_p21_Stoliar http://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_15497747_v61_n1_p21_Stoliar
record_format	dspace
spelling	paper:paper_15497747_v61_n1_p21_Stoliar2025-07-30T18:57:00Z Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit Levy, Pablo Eduardo Sánchez, María José Rozenberg, Marcelo Javier Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-b MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS device to an arbitrary value. Our MLC system demonstrates that transition metal oxide nonvolatile memory devices may compete with currently available MLCs. © 2004-2012 IEEE. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sanchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2014 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15497747_v61_n1_p21_Stoliar http://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage
spellingShingle	Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage Levy, Pablo Eduardo Sánchez, María José Rozenberg, Marcelo Javier Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
topic_facet	Multilevel cell (MLC) nonvolatile memory resistive random access memory (ReRAM) resistive switching (RS) Metallic compounds Switching systems Transition metals Multi level cell (MLC) Multilevel cell (MLC) memory Multilevel resistive switching Non-volatile memory Nonvolatile memory devices Resistive Random Access Memory (ReRAM) Resistive switching Transition-metal oxides Nonvolatile storage
description	We study the resistive switching (RS) mechanism as a way to obtain multilevel cell (MLC) memory devices. In an MLC, more than 1 b of information can be stored in each cell. Here, we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-b MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS device to an arbitrary value. Our MLC system demonstrates that transition metal oxide nonvolatile memory devices may compete with currently available MLCs. © 2004-2012 IEEE.
author	Levy, Pablo Eduardo Sánchez, María José Rozenberg, Marcelo Javier
author_facet	Levy, Pablo Eduardo Sánchez, María José Rozenberg, Marcelo Javier
author_sort	Levy, Pablo Eduardo
title	Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
title_short	Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
title_full	Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
title_fullStr	Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
title_full_unstemmed	Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit
title_sort	nonvolatile multilevel resistive switching memory cell: a transition metal oxide-based circuit
publishDate	2014
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_15497747_v61_n1_p21_Stoliar http://hdl.handle.net/20.500.12110/paper_15497747_v61_n1_p21_Stoliar
work_keys_str_mv	AT levypabloeduardo nonvolatilemultilevelresistiveswitchingmemorycellatransitionmetaloxidebasedcircuit AT sanchezmariajose nonvolatilemultilevelresistiveswitchingmemorycellatransitionmetaloxidebasedcircuit AT rozenbergmarcelojavier nonvolatilemultilevelresistiveswitchingmemorycellatransitionmetaloxidebasedcircuit
_version_	1840328085568749568

Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

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