A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches
The energy loss of slow protons in nonconducting materials, including semiconductors and insulators, is studied using different theoretical methods. First we apply two dielectric models proposed by Brandt and Reinheimer on one side, and by Levine and Louie on the other, and describe in detail the pr...
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2016
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_14346028_v89_n3_p_Archubi http://hdl.handle.net/20.500.12110/paper_14346028_v89_n3_p_Archubi |
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paper:paper_14346028_v89_n3_p_Archubi2025-07-30T18:50:23Z A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches Germanium Alternative calculations Approximate descriptions Current limitation Dielectric models Nonlinear approach Theoretical methods Threshold effect Transport cross-section Energy dissipation The energy loss of slow protons in nonconducting materials, including semiconductors and insulators, is studied using different theoretical methods. First we apply two dielectric models proposed by Brandt and Reinheimer on one side, and by Levine and Louie on the other, and describe in detail the properties of individual and collective contributions according to each model. In addition, we perform an alternative calculation using a non-linear approach based on transport-cross-section methods. These different approaches are compared with experimental results for two semiconductors (Si and Ge) and two insulators (LiF and AlF3), obtaining an approximate description of threshold effects at very low energies. Some interesting similarities and discrepancies are found, which show the current limitations of the theoretical descriptions provided by these methods. © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2016. 2016 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_14346028_v89_n3_p_Archubi http://hdl.handle.net/20.500.12110/paper_14346028_v89_n3_p_Archubi |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Germanium Alternative calculations Approximate descriptions Current limitation Dielectric models Nonlinear approach Theoretical methods Threshold effect Transport cross-section Energy dissipation |
| spellingShingle |
Germanium Alternative calculations Approximate descriptions Current limitation Dielectric models Nonlinear approach Theoretical methods Threshold effect Transport cross-section Energy dissipation A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches |
| topic_facet |
Germanium Alternative calculations Approximate descriptions Current limitation Dielectric models Nonlinear approach Theoretical methods Threshold effect Transport cross-section Energy dissipation |
| description |
The energy loss of slow protons in nonconducting materials, including semiconductors and insulators, is studied using different theoretical methods. First we apply two dielectric models proposed by Brandt and Reinheimer on one side, and by Levine and Louie on the other, and describe in detail the properties of individual and collective contributions according to each model. In addition, we perform an alternative calculation using a non-linear approach based on transport-cross-section methods. These different approaches are compared with experimental results for two semiconductors (Si and Ge) and two insulators (LiF and AlF3), obtaining an approximate description of threshold effects at very low energies. Some interesting similarities and discrepancies are found, which show the current limitations of the theoretical descriptions provided by these methods. © EDP Sciences, Società Italiana di Fisica, Springer-Verlag 2016. |
| title |
A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches |
| title_short |
A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches |
| title_full |
A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches |
| title_fullStr |
A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches |
| title_full_unstemmed |
A study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches |
| title_sort |
study of threshold effects in the energy loss of slow protons in semiconductors and insulators using dielectric and non-linear approaches |
| publishDate |
2016 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_14346028_v89_n3_p_Archubi http://hdl.handle.net/20.500.12110/paper_14346028_v89_n3_p_Archubi |
| _version_ |
1840321860838883328 |