Dc four-point resistance of a double-barrier quantum pump

We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistan...

Descripción completa

Detalles Bibliográficos
Autores principales: Foieri, Federico, Sánchez, María José
Publicado: 2009
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v79_n8_p_Foieri
http://hdl.handle.net/20.500.12110/paper_10980121_v79_n8_p_Foieri
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_10980121_v79_n8_p_Foieri
record_format dspace
spelling paper:paper_10980121_v79_n8_p_Foieri2023-06-08T16:07:44Z Dc four-point resistance of a double-barrier quantum pump Foieri, Federico Sánchez, María José We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistance measured in the same structure under a stationary bias voltage difference between left and right reservoirs. This result valid beyond the adiabatic pumping regime can be taken as an indication of the universal character of R4t as a measure of the resistive properties of a sample, irrespectively, of the mechanism used to induce the transport. © 2009 The American Physical Society. Fil:Foieri, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2009 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v79_n8_p_Foieri http://hdl.handle.net/20.500.12110/paper_10980121_v79_n8_p_Foieri
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistance measured in the same structure under a stationary bias voltage difference between left and right reservoirs. This result valid beyond the adiabatic pumping regime can be taken as an indication of the universal character of R4t as a measure of the resistive properties of a sample, irrespectively, of the mechanism used to induce the transport. © 2009 The American Physical Society.
author Foieri, Federico
Sánchez, María José
spellingShingle Foieri, Federico
Sánchez, María José
Dc four-point resistance of a double-barrier quantum pump
author_facet Foieri, Federico
Sánchez, María José
author_sort Foieri, Federico
title Dc four-point resistance of a double-barrier quantum pump
title_short Dc four-point resistance of a double-barrier quantum pump
title_full Dc four-point resistance of a double-barrier quantum pump
title_fullStr Dc four-point resistance of a double-barrier quantum pump
title_full_unstemmed Dc four-point resistance of a double-barrier quantum pump
title_sort dc four-point resistance of a double-barrier quantum pump
publishDate 2009
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v79_n8_p_Foieri
http://hdl.handle.net/20.500.12110/paper_10980121_v79_n8_p_Foieri
work_keys_str_mv AT foierifederico dcfourpointresistanceofadoublebarrierquantumpump
AT sanchezmariajose dcfourpointresistanceofadoublebarrierquantumpump
_version_ 1768544096231620608

Ejemplares similares