Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors

We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band....

Descripción completa

Guardado en:
Detalles Bibliográficos
Autor principal: Tamborenea, Pablo Ignacio
Publicado: 2007
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v76_n8_p_Tamborenea
http://hdl.handle.net/20.500.12110/paper_10980121_v76_n8_p_Tamborenea
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_10980121_v76_n8_p_Tamborenea
record_format dspace
spelling paper:paper_10980121_v76_n8_p_Tamborenea2023-06-08T16:07:39Z Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors Tamborenea, Pablo Ignacio We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society. Fil:Tamborenea, P.I. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2007 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v76_n8_p_Tamborenea http://hdl.handle.net/20.500.12110/paper_10980121_v76_n8_p_Tamborenea
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
description We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin-conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore, the proposed mechanism has to be included when describing spin relaxation in the impurity band. © 2007 The American Physical Society.
author Tamborenea, Pablo Ignacio
spellingShingle Tamborenea, Pablo Ignacio
Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
author_facet Tamborenea, Pablo Ignacio
author_sort Tamborenea, Pablo Ignacio
title Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_short Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_full Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_fullStr Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_full_unstemmed Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
title_sort relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
publishDate 2007
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10980121_v76_n8_p_Tamborenea
http://hdl.handle.net/20.500.12110/paper_10980121_v76_n8_p_Tamborenea
work_keys_str_mv AT tamboreneapabloignacio relaxationmechanismforelectronspinintheimpuritybandofndopedsemiconductors
_version_ 1768545341567664128

Ejemplares similares