Radiation defects studies on Ar-lmplanted Hg1-xCdxTe

Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiat...

Descripción completa

Detalles Bibliográficos
Publicado: 1997
Materias:
Infrared Detectors
Ion Implantation
Radiation Defects
Rutherford Backscattering Spectroscopy and Channeling
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre
http://hdl.handle.net/20.500.12110/paper_10120386_v152_n_p33_Aguirre
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_10120386_v152_n_p33_Aguirre
record_format dspace
spelling paper:paper_10120386_v152_n_p33_Aguirre2023-06-08T15:59:42Z Radiation defects studies on Ar-lmplanted Hg1-xCdxTe Infrared Detectors Ion Implantation Radiation Defects Rutherford Backscattering Spectroscopy and Channeling Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiation of MCT with different concentrations (x = 0.1 and 0.2 ) and different crystallines orientations: (111), (110) and (100). Results are discussed pointing out that stacking faults are probable near projected range (Rp) depth while interstitials seem to be more probable at deeper distances than Rp. 1997 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre http://hdl.handle.net/20.500.12110/paper_10120386_v152_n_p33_Aguirre
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Infrared Detectors
Ion Implantation
Radiation Defects
Rutherford Backscattering Spectroscopy and Channeling
spellingShingle Infrared Detectors
Ion Implantation
Radiation Defects
Rutherford Backscattering Spectroscopy and Channeling
Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
topic_facet Infrared Detectors
Ion Implantation
Radiation Defects
Rutherford Backscattering Spectroscopy and Channeling
description Radiation induced defects are studied in Hg1-xCdxTe (MCT) ISOVPE grown epitaxial film after the implantation with Ar++ (300 keV). The influence of ion-radiation damage on the electrical properties of MCT has been also investigated. A comparison of the defects profiles is performed after the irradiation of MCT with different concentrations (x = 0.1 and 0.2 ) and different crystallines orientations: (111), (110) and (100). Results are discussed pointing out that stacking faults are probable near projected range (Rp) depth while interstitials seem to be more probable at deeper distances than Rp.
title Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_short Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_full Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_fullStr Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_full_unstemmed Radiation defects studies on Ar-lmplanted Hg1-xCdxTe
title_sort radiation defects studies on ar-lmplanted hg1-xcdxte
publishDate 1997
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_10120386_v152_n_p33_Aguirre
http://hdl.handle.net/20.500.12110/paper_10120386_v152_n_p33_Aguirre
_version_ 1768544787255787520

Ejemplares similares