Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure
In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a s...
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2007
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paper:paper_09214526_v398_n2_p393_PeraltaRamos2023-06-08T15:50:30Z Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure Peralta Ramos, Jerónimo Llois, Ana María Double tunnel junctions Fe/ZnSe Interface structure Tunneling magnetoresistance Double tunnel junctions Interface structure Tight-binding Hamiltonian Tunneling magnetoresistance Band structure Bias voltage Electronic structure Hamiltonians Interfaces (materials) Magnetoresistance Tunnel junctions In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions. © 2007 Elsevier B.V. All rights reserved. Fil:Peralta-Ramos, J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Llois, A.M. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2007 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v398_n2_p393_PeraltaRamos http://hdl.handle.net/20.500.12110/paper_09214526_v398_n2_p393_PeraltaRamos |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Double tunnel junctions Fe/ZnSe Interface structure Tunneling magnetoresistance Double tunnel junctions Interface structure Tight-binding Hamiltonian Tunneling magnetoresistance Band structure Bias voltage Electronic structure Hamiltonians Interfaces (materials) Magnetoresistance Tunnel junctions |
| spellingShingle |
Double tunnel junctions Fe/ZnSe Interface structure Tunneling magnetoresistance Double tunnel junctions Interface structure Tight-binding Hamiltonian Tunneling magnetoresistance Band structure Bias voltage Electronic structure Hamiltonians Interfaces (materials) Magnetoresistance Tunnel junctions Peralta Ramos, Jerónimo Llois, Ana María Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure |
| topic_facet |
Double tunnel junctions Fe/ZnSe Interface structure Tunneling magnetoresistance Double tunnel junctions Interface structure Tight-binding Hamiltonian Tunneling magnetoresistance Band structure Bias voltage Electronic structure Hamiltonians Interfaces (materials) Magnetoresistance Tunnel junctions |
| description |
In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions. © 2007 Elsevier B.V. All rights reserved. |
| author |
Peralta Ramos, Jerónimo Llois, Ana María |
| author_facet |
Peralta Ramos, Jerónimo Llois, Ana María |
| author_sort |
Peralta Ramos, Jerónimo |
| title |
Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure |
| title_short |
Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure |
| title_full |
Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure |
| title_fullStr |
Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure |
| title_full_unstemmed |
Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and double-barrier junctions as a function of interface structure |
| title_sort |
tunneling magnetoresistance of fe/znse (0 0 1) single- and double-barrier junctions as a function of interface structure |
| publishDate |
2007 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_09214526_v398_n2_p393_PeraltaRamos http://hdl.handle.net/20.500.12110/paper_09214526_v398_n2_p393_PeraltaRamos |
| work_keys_str_mv |
AT peraltaramosjeronimo tunnelingmagnetoresistanceoffeznse001singleanddoublebarrierjunctionsasafunctionofinterfacestructure AT lloisanamaria tunnelingmagnetoresistanceoffeznse001singleanddoublebarrierjunctionsasafunctionofinterfacestructure |
| _version_ |
1768541944284184576 |