Shock waves in binary oxides memristors
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics....
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2017
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v10357_n_p_Tesler http://hdl.handle.net/20.500.12110/paper_0277786X_v10357_n_p_Tesler |
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paper:paper_0277786X_v10357_n_p_Tesler2025-07-30T18:03:59Z Shock waves in binary oxides memristors Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations. © 2017 SPIE. 2017 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v10357_n_p_Tesler http://hdl.handle.net/20.500.12110/paper_0277786X_v10357_n_p_Tesler |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves |
| spellingShingle |
Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves Shock waves in binary oxides memristors |
| topic_facet |
Memristors Resistive Switching Shock Waves Bins Magnetoelectronics Memristors Transition metal compounds Transition metals Minimum feature sizes Model simulation Non-linear dynamics Resistive switching Resistive switching behaviors Silicon-based technology Transition-metal oxides Trial and error Shock waves |
| description |
Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations. © 2017 SPIE. |
| title |
Shock waves in binary oxides memristors |
| title_short |
Shock waves in binary oxides memristors |
| title_full |
Shock waves in binary oxides memristors |
| title_fullStr |
Shock waves in binary oxides memristors |
| title_full_unstemmed |
Shock waves in binary oxides memristors |
| title_sort |
shock waves in binary oxides memristors |
| publishDate |
2017 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_0277786X_v10357_n_p_Tesler http://hdl.handle.net/20.500.12110/paper_0277786X_v10357_n_p_Tesler |
| _version_ |
1843124120032641024 |