Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd's mirror IL set...
| Autores principales: | , |
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2006
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02729172_v961_n_p230_Marconi http://hdl.handle.net/20.500.12110/paper_02729172_v961_n_p230_Marconi |
| Aporte de: |
| Sumario: | Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd's mirror IL setup to pattern lines and arrays of nano-dots with period smaller than 100 nm in a polymethil metacrylate (PMMA) coated Si wafer. Multiple exposure in the same sample added versatility to the patterning method allowing different motifs. Also, using the high peak power of the EUV laser, ablation of sub-100 nm holes in PMMA was also demonstrated. The smallest diameter ablated holes, 82 nm, were obtained by placing the sample at the third order focus of a Fresnell zone plate (FZP) lens. These results demonstrate the feasibility of sub-100 nm patterning of materials with a focused EUV laser beams, opening a path for the development of new nanoprobes and nanomachining tools. © 2007 Materials Research Society. |
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