Nanopatterning and nanomachining with table-top extreme ultraviolet lasers

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Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd's mirror IL set...

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Autores principales:	Marconi, Mario Carlos, Capeluto, María Gabriela
Publicado:	2006
Materias:	Extreme ultraviolet lasers Fresnell zone plate (FZP) lens Extreme ultraviolet lithography Photoresists Polymethyl methacrylates Silicon wafers Semiconductor quantum dots
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02729172_v961_n_p230_Marconi http://hdl.handle.net/20.500.12110/paper_02729172_v961_n_p230_Marconi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_02729172_v961_n_p230_Marconi
record_format	dspace
spelling	paper:paper_02729172_v961_n_p230_Marconi2023-06-08T15:25:28Z Nanopatterning and nanomachining with table-top extreme ultraviolet lasers Marconi, Mario Carlos Capeluto, María Gabriela Extreme ultraviolet lasers Fresnell zone plate (FZP) lens Extreme ultraviolet lithography Photoresists Polymethyl methacrylates Silicon wafers Semiconductor quantum dots Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd's mirror IL setup to pattern lines and arrays of nano-dots with period smaller than 100 nm in a polymethil metacrylate (PMMA) coated Si wafer. Multiple exposure in the same sample added versatility to the patterning method allowing different motifs. Also, using the high peak power of the EUV laser, ablation of sub-100 nm holes in PMMA was also demonstrated. The smallest diameter ablated holes, 82 nm, were obtained by placing the sample at the third order focus of a Fresnell zone plate (FZP) lens. These results demonstrate the feasibility of sub-100 nm patterning of materials with a focused EUV laser beams, opening a path for the development of new nanoprobes and nanomachining tools. © 2007 Materials Research Society. Fil:Marconi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Capeluto, M.G. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2006 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02729172_v961_n_p230_Marconi http://hdl.handle.net/20.500.12110/paper_02729172_v961_n_p230_Marconi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Extreme ultraviolet lasers Fresnell zone plate (FZP) lens Extreme ultraviolet lithography Photoresists Polymethyl methacrylates Silicon wafers Semiconductor quantum dots
spellingShingle	Extreme ultraviolet lasers Fresnell zone plate (FZP) lens Extreme ultraviolet lithography Photoresists Polymethyl methacrylates Silicon wafers Semiconductor quantum dots Marconi, Mario Carlos Capeluto, María Gabriela Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
topic_facet	Extreme ultraviolet lasers Fresnell zone plate (FZP) lens Extreme ultraviolet lithography Photoresists Polymethyl methacrylates Silicon wafers Semiconductor quantum dots
description	Patterning of photo-resist was accomplished using a table top extreme ultraviolet (EUV) laser and an interferometric lithography set up. The high and controllable degree of coherence output of the recently developed EUV laser in Colorado State University was exploited in a Lloyd's mirror IL setup to pattern lines and arrays of nano-dots with period smaller than 100 nm in a polymethil metacrylate (PMMA) coated Si wafer. Multiple exposure in the same sample added versatility to the patterning method allowing different motifs. Also, using the high peak power of the EUV laser, ablation of sub-100 nm holes in PMMA was also demonstrated. The smallest diameter ablated holes, 82 nm, were obtained by placing the sample at the third order focus of a Fresnell zone plate (FZP) lens. These results demonstrate the feasibility of sub-100 nm patterning of materials with a focused EUV laser beams, opening a path for the development of new nanoprobes and nanomachining tools. © 2007 Materials Research Society.
author	Marconi, Mario Carlos Capeluto, María Gabriela
author_facet	Marconi, Mario Carlos Capeluto, María Gabriela
author_sort	Marconi, Mario Carlos
title	Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
title_short	Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
title_full	Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
title_fullStr	Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
title_full_unstemmed	Nanopatterning and nanomachining with table-top extreme ultraviolet lasers
title_sort	nanopatterning and nanomachining with table-top extreme ultraviolet lasers
publishDate	2006
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02729172_v961_n_p230_Marconi http://hdl.handle.net/20.500.12110/paper_02729172_v961_n_p230_Marconi
work_keys_str_mv	AT marconimariocarlos nanopatterningandnanomachiningwithtabletopextremeultravioletlasers AT capelutomariagabriela nanopatterningandnanomachiningwithtabletopextremeultravioletlasers
_version_	1768542503514931200

Nanopatterning and nanomachining with table-top extreme ultraviolet lasers

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