Growth of (100)-highly textured BaBiO3 thin films on silicon

We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO3 thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Williams, Federico Jose, Rubi, Diego
Publicado: 2016
Materias:
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v612_n_p369_Ferreyra
http://hdl.handle.net/20.500.12110/paper_00406090_v612_n_p369_Ferreyra
Aporte de:
id paper:paper_00406090_v612_n_p369_Ferreyra
record_format dspace
spelling paper:paper_00406090_v612_n_p369_Ferreyra2023-06-08T15:04:38Z Growth of (100)-highly textured BaBiO3 thin films on silicon Williams, Federico Jose Rubi, Diego BaBiO3 Oxide heterostructures Textured growth on silicon Silicon Silicon oxides Thin films X ray diffraction BaBiO<sub>3</sub> Deposition conditions Growth stages Oxide heterostructures Silicon substrates Textured growth Epitaxial growth We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO3 thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO2 buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO3 films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. © 2016 Elsevier B.V. Fil:Williams, F.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2016 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v612_n_p369_Ferreyra http://hdl.handle.net/20.500.12110/paper_00406090_v612_n_p369_Ferreyra
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic BaBiO3
Oxide heterostructures
Textured growth on silicon
Silicon
Silicon oxides
Thin films
X ray diffraction
BaBiO<sub>3</sub>
Deposition conditions
Growth stages
Oxide heterostructures
Silicon substrates
Textured growth
Epitaxial growth
spellingShingle BaBiO3
Oxide heterostructures
Textured growth on silicon
Silicon
Silicon oxides
Thin films
X ray diffraction
BaBiO<sub>3</sub>
Deposition conditions
Growth stages
Oxide heterostructures
Silicon substrates
Textured growth
Epitaxial growth
Williams, Federico Jose
Rubi, Diego
Growth of (100)-highly textured BaBiO3 thin films on silicon
topic_facet BaBiO3
Oxide heterostructures
Textured growth on silicon
Silicon
Silicon oxides
Thin films
X ray diffraction
BaBiO<sub>3</sub>
Deposition conditions
Growth stages
Oxide heterostructures
Silicon substrates
Textured growth
Epitaxial growth
description We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO3 thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO2 buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO3 films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. © 2016 Elsevier B.V.
author Williams, Federico Jose
Rubi, Diego
author_facet Williams, Federico Jose
Rubi, Diego
author_sort Williams, Federico Jose
title Growth of (100)-highly textured BaBiO3 thin films on silicon
title_short Growth of (100)-highly textured BaBiO3 thin films on silicon
title_full Growth of (100)-highly textured BaBiO3 thin films on silicon
title_fullStr Growth of (100)-highly textured BaBiO3 thin films on silicon
title_full_unstemmed Growth of (100)-highly textured BaBiO3 thin films on silicon
title_sort growth of (100)-highly textured babio3 thin films on silicon
publishDate 2016
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00406090_v612_n_p369_Ferreyra
http://hdl.handle.net/20.500.12110/paper_00406090_v612_n_p369_Ferreyra
work_keys_str_mv AT williamsfedericojose growthof100highlytexturedbabio3thinfilmsonsilicon
AT rubidiego growthof100highlytexturedbabio3thinfilmsonsilicon
_version_ 1768546575535046656