First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8

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The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single cr...

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Autores principales:	Camjayi, Alberto, Acha, Carlos Enrique, Weht, Ruben Oscar, Rozenberg, Marcelo Javier
Publicado:	2014
Materias:	Mean field theory 3d systems Applied pressure Dynamical mean-field theory First order Insulator to metal Insulator-to-metal transitions Mott transitions Symmetry-breaking Magnetic thin films
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00319007_v113_n8_p_Camjayi http://hdl.handle.net/20.500.12110/paper_00319007_v113_n8_p_Camjayi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00319007_v113_n8_p_Camjayi
record_format	dspace
spelling	paper:paper_00319007_v113_n8_p_Camjayi2023-06-08T14:58:12Z First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8 Camjayi, Alberto Acha, Carlos Enrique Weht, Ruben Oscar Rozenberg, Marcelo Javier Mean field theory 3d systems Applied pressure Dynamical mean-field theory First order Insulator to metal Insulator-to-metal transitions Mott transitions Symmetry-breaking Magnetic thin films The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement. © 2014 American Physical Society. Fil:Camjayi, A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Weht, R. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2014 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00319007_v113_n8_p_Camjayi http://hdl.handle.net/20.500.12110/paper_00319007_v113_n8_p_Camjayi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Mean field theory 3d systems Applied pressure Dynamical mean-field theory First order Insulator to metal Insulator-to-metal transitions Mott transitions Symmetry-breaking Magnetic thin films
spellingShingle	Mean field theory 3d systems Applied pressure Dynamical mean-field theory First order Insulator to metal Insulator-to-metal transitions Mott transitions Symmetry-breaking Magnetic thin films Camjayi, Alberto Acha, Carlos Enrique Weht, Ruben Oscar Rozenberg, Marcelo Javier First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8
topic_facet	Mean field theory 3d systems Applied pressure Dynamical mean-field theory First order Insulator to metal Insulator-to-metal transitions Mott transitions Symmetry-breaking Magnetic thin films
description	The nature of the Mott transition in the absence of any symmetry breaking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement. © 2014 American Physical Society.
author	Camjayi, Alberto Acha, Carlos Enrique Weht, Ruben Oscar Rozenberg, Marcelo Javier
author_facet	Camjayi, Alberto Acha, Carlos Enrique Weht, Ruben Oscar Rozenberg, Marcelo Javier
author_sort	Camjayi, Alberto
title	First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8
title_short	First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8
title_full	First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8
title_fullStr	First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8
title_full_unstemmed	First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8
title_sort	first-order insulator-to-metal mott transition in the paramagnetic 3d system gata4se8
publishDate	2014
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00319007_v113_n8_p_Camjayi http://hdl.handle.net/20.500.12110/paper_00319007_v113_n8_p_Camjayi
work_keys_str_mv	AT camjayialberto firstorderinsulatortometalmotttransitionintheparamagnetic3dsystemgata4se8 AT achacarlosenrique firstorderinsulatortometalmotttransitionintheparamagnetic3dsystemgata4se8 AT wehtrubenoscar firstorderinsulatortometalmotttransitionintheparamagnetic3dsystemgata4se8 AT rozenbergmarcelojavier firstorderinsulatortometalmotttransitionintheparamagnetic3dsystemgata4se8
_version_	1768545821095100416

First-order insulator-to-metal Mott transition in the paramagnetic 3D system GaTa4Se8

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