Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques wer...

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Guardado en:
Detalles Bibliográficos
Publicado: 2013
Materias:
Atomic layer deposited
C-V measurement
Capacitance-voltage techniques
Constant capacitance
Electrical characteristic
Electron trap density
Experimental evidence
Insulating layers
Main effect
Non-volatile memories
Non-volatile memory application
Physical model
Atomic layer deposition
Electron traps
MOS capacitors
Aluminum
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v113_n7_p_SambucoSalomone
http://hdl.handle.net/20.500.12110/paper_00218979_v113_n7_p_SambucoSalomone
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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