Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications
Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques wer...
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2013
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v113_n7_p_SambucoSalomone http://hdl.handle.net/20.500.12110/paper_00218979_v113_n7_p_SambucoSalomone |
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paper:paper_00218979_v113_n7_p_SambucoSalomone2023-06-08T14:42:50Z Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications Atomic layer deposited C-V measurement Capacitance-voltage techniques Constant capacitance Electrical characteristic Electron trap density Experimental evidence Insulating layers Main effect Non-volatile memories Non-volatile memory application Physical model Atomic layer deposition Electron traps MOS capacitors Aluminum Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm-3 and 1.6 × 1018 cm-3, respectively. © 2013 American Institute of Physics. 2013 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v113_n7_p_SambucoSalomone http://hdl.handle.net/20.500.12110/paper_00218979_v113_n7_p_SambucoSalomone |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
Atomic layer deposited C-V measurement Capacitance-voltage techniques Constant capacitance Electrical characteristic Electron trap density Experimental evidence Insulating layers Main effect Non-volatile memories Non-volatile memory application Physical model Atomic layer deposition Electron traps MOS capacitors Aluminum |
| spellingShingle |
Atomic layer deposited C-V measurement Capacitance-voltage techniques Constant capacitance Electrical characteristic Electron trap density Experimental evidence Insulating layers Main effect Non-volatile memories Non-volatile memory application Physical model Atomic layer deposition Electron traps MOS capacitors Aluminum Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications |
| topic_facet |
Atomic layer deposited C-V measurement Capacitance-voltage techniques Constant capacitance Electrical characteristic Electron trap density Experimental evidence Insulating layers Main effect Non-volatile memories Non-volatile memory application Physical model Atomic layer deposition Electron traps MOS capacitors Aluminum |
| description |
Al2O3-based dielectrics are currently considered as promising materials to use in nonvolatile memories. The electron trap density in this material is much higher than in conventional SiO2, being their characteristics critical for the application. Conventional capacitance-voltage (C-V) techniques were used to study the main effects of the electron traps on the electrical characteristics of MOS capacitors with atomic layer deposited Al2O3 as insulating layer. More detailed information about the trapping kinetics was obtained through the study of the constant capacitance voltage transient. Two different types of traps were found. One is responsible for the instabilities observed in C-V measurements, the other has characteristic trapping times three orders longer. A physical model is presented to explain the observed trapping kinetics exhibiting good agreement between experiments and simulations. The energy levels of the studied traps were determined at 2.2 and 2.6 eV below the Al2O3 conduction band, with densities of 2.9 × 1018 cm-3 and 1.6 × 1018 cm-3, respectively. © 2013 American Institute of Physics. |
| title |
Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications |
| title_short |
Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications |
| title_full |
Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications |
| title_fullStr |
Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications |
| title_full_unstemmed |
Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications |
| title_sort |
experimental evidence and modeling of two types of electron traps in al2o3 for nonvolatile memory applications |
| publishDate |
2013 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v113_n7_p_SambucoSalomone http://hdl.handle.net/20.500.12110/paper_00218979_v113_n7_p_SambucoSalomone |
| _version_ |
1768543309226049536 |