A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition

A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic fo...

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Autores principales: Marchi, María Claudia, Aldabe Bilmes, Sara Alfonsina Dora, Alvarez, Fernando
Publicado: 2010
Materias:
TiO
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v108_n6_p_Marchi
http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
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spelling paper:paper_00218979_v108_n6_p_Marchi2023-06-08T14:42:47Z A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition Marchi, María Claudia Aldabe Bilmes, Sara Alfonsina Dora Alvarez, Fernando Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics. Fil:Marchi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Bilmes, S.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Alvarez, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2010 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v108_n6_p_Marchi http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
spellingShingle Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
Marchi, María Claudia
Aldabe Bilmes, Sara Alfonsina Dora
Alvarez, Fernando
A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
topic_facet Abrupt transition
Comprehensive studies
Crystal structure and morphology
Energy minimization
Influence of oxygen
Ion beam deposition
Ion beam deposition technique
Non-stoichiometry
TiO
Titanium oxide thin films
Wide-gap semiconductor
X-ray photoelectrons
Atomic force microscopy
Atomic spectroscopy
Chemical modification
Coalescence
Crystal structure
Fourier transform infrared spectroscopy
Fourier transforms
Ion beams
Oxide films
Oxygen
Photoelectron spectroscopy
Physical properties
Stoichiometry
Titanium
Titanium oxides
Film preparation
description A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics.
author Marchi, María Claudia
Aldabe Bilmes, Sara Alfonsina Dora
Alvarez, Fernando
author_facet Marchi, María Claudia
Aldabe Bilmes, Sara Alfonsina Dora
Alvarez, Fernando
author_sort Marchi, María Claudia
title A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_short A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_full A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_fullStr A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_full_unstemmed A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
title_sort comprehensive study of the influence of the stoichiometry on the physical properties of tio x films prepared by ion beam deposition
publishDate 2010
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v108_n6_p_Marchi
http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi
work_keys_str_mv AT marchimariaclaudia acomprehensivestudyoftheinfluenceofthestoichiometryonthephysicalpropertiesoftioxfilmspreparedbyionbeamdeposition
AT aldabebilmessaraalfonsinadora acomprehensivestudyoftheinfluenceofthestoichiometryonthephysicalpropertiesoftioxfilmspreparedbyionbeamdeposition
AT alvarezfernando acomprehensivestudyoftheinfluenceofthestoichiometryonthephysicalpropertiesoftioxfilmspreparedbyionbeamdeposition
AT marchimariaclaudia comprehensivestudyoftheinfluenceofthestoichiometryonthephysicalpropertiesoftioxfilmspreparedbyionbeamdeposition
AT aldabebilmessaraalfonsinadora comprehensivestudyoftheinfluenceofthestoichiometryonthephysicalpropertiesoftioxfilmspreparedbyionbeamdeposition
AT alvarezfernando comprehensivestudyoftheinfluenceofthestoichiometryonthephysicalpropertiesoftioxfilmspreparedbyionbeamdeposition
_version_ 1768543261053419520