A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition
A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic fo...
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2010
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Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v108_n6_p_Marchi http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi |
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paper:paper_00218979_v108_n6_p_Marchi2023-06-08T14:42:47Z A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition Marchi, María Claudia Aldabe Bilmes, Sara Alfonsina Dora Alvarez, Fernando Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics. Fil:Marchi, M.C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Bilmes, S.A. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Alvarez, F. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2010 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v108_n6_p_Marchi http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi |
institution |
Universidad de Buenos Aires |
institution_str |
I-28 |
repository_str |
R-134 |
collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
topic |
Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation |
spellingShingle |
Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation Marchi, María Claudia Aldabe Bilmes, Sara Alfonsina Dora Alvarez, Fernando A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition |
topic_facet |
Abrupt transition Comprehensive studies Crystal structure and morphology Energy minimization Influence of oxygen Ion beam deposition Ion beam deposition technique Non-stoichiometry TiO Titanium oxide thin films Wide-gap semiconductor X-ray photoelectrons Atomic force microscopy Atomic spectroscopy Chemical modification Coalescence Crystal structure Fourier transform infrared spectroscopy Fourier transforms Ion beams Oxide films Oxygen Photoelectron spectroscopy Physical properties Stoichiometry Titanium Titanium oxides Film preparation |
description |
A comprehensive study of nonstoichiometry titanium oxide thin films (TiO x , 0.3≤x≤2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence. © 2010 American Institute of Physics. |
author |
Marchi, María Claudia Aldabe Bilmes, Sara Alfonsina Dora Alvarez, Fernando |
author_facet |
Marchi, María Claudia Aldabe Bilmes, Sara Alfonsina Dora Alvarez, Fernando |
author_sort |
Marchi, María Claudia |
title |
A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition |
title_short |
A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition |
title_full |
A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition |
title_fullStr |
A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition |
title_full_unstemmed |
A comprehensive study of the influence of the stoichiometry on the physical properties of TiO x films prepared by ion beam deposition |
title_sort |
comprehensive study of the influence of the stoichiometry on the physical properties of tio x films prepared by ion beam deposition |
publishDate |
2010 |
url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v108_n6_p_Marchi http://hdl.handle.net/20.500.12110/paper_00218979_v108_n6_p_Marchi |
work_keys_str_mv |
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1768543261053419520 |