Hysteresis switching loops in Ag-manganite memristive interfaces

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops...

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Autores principales: Sánchez, María José, Levy, Pablo Eduardo, Rozenberg, Marcelo Javier
Publicado: 2010
Materias:
Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
Acceso en línea:https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v107_n9_p_Ghenzi
http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
Aporte de:
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires
id paper:paper_00218979_v107_n9_p_Ghenzi
record_format dspace
spelling paper:paper_00218979_v107_n9_p_Ghenzi2025-07-30T17:25:09Z Hysteresis switching loops in Ag-manganite memristive interfaces Sánchez, María José Levy, Pablo Eduardo Rozenberg, Marcelo Javier Applied electric field Hysteresis switching Initial state Microscopic mechanisms Realistic model Resistance state Resistive switching Switching thresholds Transition-metal oxides Computer simulation Electric fields Hysteresis Manganese oxide Oxygen Oxygen vacancies Transition metal compounds Transition metals Vacancies Switching Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2010 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v107_n9_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-134
collection Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
spellingShingle Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
Sánchez, María José
Levy, Pablo Eduardo
Rozenberg, Marcelo Javier
Hysteresis switching loops in Ag-manganite memristive interfaces
topic_facet Applied electric field
Hysteresis switching
Initial state
Microscopic mechanisms
Realistic model
Resistance state
Resistive switching
Switching thresholds
Transition-metal oxides
Computer simulation
Electric fields
Hysteresis
Manganese oxide
Oxygen
Oxygen vacancies
Transition metal compounds
Transition metals
Vacancies
Switching
description Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through hysteresis switching loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces. © 2010 American Institute of Physics.
author Sánchez, María José
Levy, Pablo Eduardo
Rozenberg, Marcelo Javier
author_facet Sánchez, María José
Levy, Pablo Eduardo
Rozenberg, Marcelo Javier
author_sort Sánchez, María José
title Hysteresis switching loops in Ag-manganite memristive interfaces
title_short Hysteresis switching loops in Ag-manganite memristive interfaces
title_full Hysteresis switching loops in Ag-manganite memristive interfaces
title_fullStr Hysteresis switching loops in Ag-manganite memristive interfaces
title_full_unstemmed Hysteresis switching loops in Ag-manganite memristive interfaces
title_sort hysteresis switching loops in ag-manganite memristive interfaces
publishDate 2010
url https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00218979_v107_n9_p_Ghenzi
http://hdl.handle.net/20.500.12110/paper_00218979_v107_n9_p_Ghenzi
work_keys_str_mv AT sanchezmariajose hysteresisswitchingloopsinagmanganitememristiveinterfaces
AT levypabloeduardo hysteresisswitchingloopsinagmanganitememristiveinterfaces
AT rozenbergmarcelojavier hysteresisswitchingloopsinagmanganitememristiveinterfaces
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