Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation
MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE.
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2012
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| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v59_n4PART1_p767_Quinteros http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros |
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paper:paper_00189499_v59_n4PART1_p767_Quinteros2023-06-08T14:40:10Z Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE. 2012 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v59_n4PART1_p767_Quinteros http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-134 |
| collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
| topic |
High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance |
| spellingShingle |
High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation |
| topic_facet |
High-k gate dielectrics MOS devices radiation effects Capacitance voltage Comparative analysis Gamma photons High-k dielectric High-k gate dielectrics Nanolaminate Oxygen ions Alumina Hafnium oxides MOS devices Radiation effects Capacitance |
| description |
MIS capacitance structures, with Hafnium Oxide, Alumina and nanolaminate as dielectrics were studied under gamma photons 60Co, 25 MeV oxygen ions and 10 MeV protons radiation using capacitance-voltage (C-V) characterization. © 2012 IEEE. |
| title |
Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation |
| title_short |
Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation |
| title_full |
Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation |
| title_fullStr |
Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation |
| title_full_unstemmed |
Comparative analysis of MIS capacitance structures with high-k dielectrics under gamma, 16O and p Radiation |
| title_sort |
comparative analysis of mis capacitance structures with high-k dielectrics under gamma, 16o and p radiation |
| publishDate |
2012 |
| url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v59_n4PART1_p767_Quinteros http://hdl.handle.net/20.500.12110/paper_00189499_v59_n4PART1_p767_Quinteros |
| _version_ |
1768546613068824576 |