Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry

In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that t...

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Detalles Bibliográficos
Publicado:	2011
Materias:	Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v58_n6PART2_p3348_Carbonetto http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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