Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry
In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that t...
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2011
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Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v58_n6PART2_p3348_Carbonetto http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto |
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paper:paper_00189499_v58_n6PART2_p3348_Carbonetto2023-06-08T14:40:09Z Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data. © 2011 IEEE. 2011 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v58_n6PART2_p3348_Carbonetto http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto |
institution |
Universidad de Buenos Aires |
institution_str |
I-28 |
repository_str |
R-134 |
collection |
Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) |
topic |
Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices |
spellingShingle |
Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry |
topic_facet |
Dosimetry ionizing radiation sensors MOS devices radiation effects temperature Absorbed dose Analytic expressions Experimental data Interface traps Metal oxide semiconductor Temperature fluctuation Thick gate oxides Zero temperature coefficients Dosimetry Error compensation Ionizing radiation Irradiation Metallic compounds Radiation effects Radiation shielding Semiconductor devices Temperature MOS devices |
description |
In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data. © 2011 IEEE. |
title |
Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry |
title_short |
Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry |
title_full |
Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry |
title_fullStr |
Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry |
title_full_unstemmed |
Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry |
title_sort |
zero temperature coefficient bias in mos devices. dependence on interface traps density, application to mos dosimetry |
publishDate |
2011 |
url |
https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00189499_v58_n6PART2_p3348_Carbonetto http://hdl.handle.net/20.500.12110/paper_00189499_v58_n6PART2_p3348_Carbonetto |
_version_ |
1768545402917748736 |