A mechanism for unipolar resistance switching in oxide nonvolatile memory devices

We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface a...

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Detalles Bibliográficos
Autores principales:	Sánchez, María José, Rozenberg, Marcelo Javier
Publicado:	2007
Materias:	Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v91_n25_p_Sanchez http://hdl.handle.net/20.500.12110/paper_00036951_v91_n25_p_Sanchez
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00036951_v91_n25_p_Sanchez
record_format	dspace
spelling	paper:paper_00036951_v91_n25_p_Sanchez2025-07-30T17:08:33Z A mechanism for unipolar resistance switching in oxide nonvolatile memory devices Sánchez, María José Rozenberg, Marcelo Javier Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures. © 2007 American Institute of Physics. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2007 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v91_n25_p_Sanchez http://hdl.handle.net/20.500.12110/paper_00036951_v91_n25_p_Sanchez
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching
spellingShingle	Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching Sánchez, María José Rozenberg, Marcelo Javier A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
topic_facet	Correlation methods MIM devices Nonvolatile storage Sandwich structures Transition metals Electronic correlation effects Nonvolatile memory devices Polarity Unipolar resistance switching Switching
description	We propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures. © 2007 American Institute of Physics.
author	Sánchez, María José Rozenberg, Marcelo Javier
author_facet	Sánchez, María José Rozenberg, Marcelo Javier
author_sort	Sánchez, María José
title	A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
title_short	A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
title_full	A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
title_fullStr	A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
title_full_unstemmed	A mechanism for unipolar resistance switching in oxide nonvolatile memory devices
title_sort	mechanism for unipolar resistance switching in oxide nonvolatile memory devices
publishDate	2007
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v91_n25_p_Sanchez http://hdl.handle.net/20.500.12110/paper_00036951_v91_n25_p_Sanchez
work_keys_str_mv	AT sanchezmariajose amechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT rozenbergmarcelojavier amechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT sanchezmariajose mechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices AT rozenbergmarcelojavier mechanismforunipolarresistanceswitchinginoxidenonvolatilememorydevices
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A mechanism for unipolar resistance switching in oxide nonvolatile memory devices

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