Strong electron correlation effects in nonvolatile electronic memory devices

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We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulato...

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Detalles Bibliográficos
Autores principales:	Rozenberg, Marcelo Javier, Sánchez, María José
Publicado:	2006
Materias:	Dielectric materials Heterojunctions Hysteresis Nonvolatile storage Transition metal alloys Electron correlation effects Nonvolatile electronic memory devices Resistance switching Transition metal oxides Data storage equipment
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v88_n3_p1_Rozenberg http://hdl.handle.net/20.500.12110/paper_00036951_v88_n3_p1_Rozenberg
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00036951_v88_n3_p1_Rozenberg
record_format	dspace
spelling	paper:paper_00036951_v88_n3_p1_Rozenberg2023-06-08T14:24:42Z Strong electron correlation effects in nonvolatile electronic memory devices Rozenberg, Marcelo Javier Sánchez, María José Dielectric materials Heterojunctions Hysteresis Nonvolatile storage Transition metal alloys Electron correlation effects Nonvolatile electronic memory devices Resistance switching Transition metal oxides Data storage equipment We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device. © 2006 American Institute of Physics. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2006 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v88_n3_p1_Rozenberg http://hdl.handle.net/20.500.12110/paper_00036951_v88_n3_p1_Rozenberg
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Dielectric materials Heterojunctions Hysteresis Nonvolatile storage Transition metal alloys Electron correlation effects Nonvolatile electronic memory devices Resistance switching Transition metal oxides Data storage equipment
spellingShingle	Dielectric materials Heterojunctions Hysteresis Nonvolatile storage Transition metal alloys Electron correlation effects Nonvolatile electronic memory devices Resistance switching Transition metal oxides Data storage equipment Rozenberg, Marcelo Javier Sánchez, María José Strong electron correlation effects in nonvolatile electronic memory devices
topic_facet	Dielectric materials Heterojunctions Hysteresis Nonvolatile storage Transition metal alloys Electron correlation effects Nonvolatile electronic memory devices Resistance switching Transition metal oxides Data storage equipment
description	We investigate hysteresis effects in a model for nonvolatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realization of a strongly correlated electron device. © 2006 American Institute of Physics.
author	Rozenberg, Marcelo Javier Sánchez, María José
author_facet	Rozenberg, Marcelo Javier Sánchez, María José
author_sort	Rozenberg, Marcelo Javier
title	Strong electron correlation effects in nonvolatile electronic memory devices
title_short	Strong electron correlation effects in nonvolatile electronic memory devices
title_full	Strong electron correlation effects in nonvolatile electronic memory devices
title_fullStr	Strong electron correlation effects in nonvolatile electronic memory devices
title_full_unstemmed	Strong electron correlation effects in nonvolatile electronic memory devices
title_sort	strong electron correlation effects in nonvolatile electronic memory devices
publishDate	2006
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v88_n3_p1_Rozenberg http://hdl.handle.net/20.500.12110/paper_00036951_v88_n3_p1_Rozenberg
work_keys_str_mv	AT rozenbergmarcelojavier strongelectroncorrelationeffectsinnonvolatileelectronicmemorydevices AT sanchezmariajose strongelectroncorrelationeffectsinnonvolatileelectronicmemorydevices
_version_	1768546047465881600

Strong electron correlation effects in nonvolatile electronic memory devices

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