Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures

We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage control...

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Detalles Bibliográficos
Autores principales:	Acha, Carlos Enrique, Sánchez, María José, Levy, Pablo Eduardo, Rubi, Diego
Publicado:	2017
Materias:	Heterojunctions Manganese oxide Switching systems Current voltage curve Electrical characterization Electrical response Fabrication procedure Impedance spectroscopy Intermediate resistance Low-resistance state Resistive switching Memristors
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v110_n5_p_RomanAcevedo http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

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