Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures

We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage control...

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Autores principales:	Acha, Carlos Enrique, Sánchez, María José, Levy, Pablo Eduardo, Rubi, Diego
Publicado:	2017
Materias:	Heterojunctions Manganese oxide Switching systems Current voltage curve Electrical characterization Electrical response Fabrication procedure Impedance spectroscopy Intermediate resistance Low-resistance state Resistive switching Memristors
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v110_n5_p_RomanAcevedo http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00036951_v110_n5_p_RomanAcevedo
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spelling	paper:paper_00036951_v110_n5_p_RomanAcevedo2023-06-08T14:24:39Z Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures Acha, Carlos Enrique Sánchez, María José Levy, Pablo Eduardo Rubi, Diego Heterojunctions Manganese oxide Switching systems Current voltage curve Electrical characterization Electrical response Fabrication procedure Impedance spectroscopy Intermediate resistance Low-resistance state Resistive switching Memristors We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active resistive switching oxides adds functionalities in relation to the single-oxide devices. We understand that these multilevel devices are interesting and promising, as their fabrication procedure is rather simple and they are fully compatible with the standard Si-based electronics. © 2017 Author(s). Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Sánchez, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Rubi, D. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2017 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v110_n5_p_RomanAcevedo http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Heterojunctions Manganese oxide Switching systems Current voltage curve Electrical characterization Electrical response Fabrication procedure Impedance spectroscopy Intermediate resistance Low-resistance state Resistive switching Memristors
spellingShingle	Heterojunctions Manganese oxide Switching systems Current voltage curve Electrical characterization Electrical response Fabrication procedure Impedance spectroscopy Intermediate resistance Low-resistance state Resistive switching Memristors Acha, Carlos Enrique Sánchez, María José Levy, Pablo Eduardo Rubi, Diego Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
topic_facet	Heterojunctions Manganese oxide Switching systems Current voltage curve Electrical characterization Electrical response Fabrication procedure Impedance spectroscopy Intermediate resistance Low-resistance state Resistive switching Memristors
description	We report on the growth and characterization of Ti/La1/3Ca3/2MnO3/SiO2/n-Si memristive devices. We demonstrate that using current as electrical stimulus unveils an intermediate resistance state, in addition to the usual high and low resistance states that are observed in the standard voltage controlled experiments. Based on thorough electrical characterization (impedance spectroscopy, current-voltage curves analysis), we disclose the contribution of three different microscopic regions of the device to the transport properties: an ohmic incomplete metallic filament, a thin manganite layer below the filament tip exhibiting Poole-Frenkel like conduction, and the SiOx layer with an electrical response well characterized by a Child-Langmuir law. Our results suggest that the existence of the SiOx layer plays a key role in the stabilization of the intermediate resistance level, indicating that the combination of two or more active resistive switching oxides adds functionalities in relation to the single-oxide devices. We understand that these multilevel devices are interesting and promising, as their fabrication procedure is rather simple and they are fully compatible with the standard Si-based electronics. © 2017 Author(s).
author	Acha, Carlos Enrique Sánchez, María José Levy, Pablo Eduardo Rubi, Diego
author_facet	Acha, Carlos Enrique Sánchez, María José Levy, Pablo Eduardo Rubi, Diego
author_sort	Acha, Carlos Enrique
title	Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_short	Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_full	Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_fullStr	Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_full_unstemmed	Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
title_sort	origin of multistate resistive switching in ti/manganite/siox/si heterostructures
publishDate	2017
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v110_n5_p_RomanAcevedo http://hdl.handle.net/20.500.12110/paper_00036951_v110_n5_p_RomanAcevedo
work_keys_str_mv	AT achacarlosenrique originofmultistateresistiveswitchingintimanganitesioxsiheterostructures AT sanchezmariajose originofmultistateresistiveswitchingintimanganitesioxsiheterostructures AT levypabloeduardo originofmultistateresistiveswitchingintimanganitesioxsiheterostructures AT rubidiego originofmultistateresistiveswitchingintimanganitesioxsiheterostructures
_version_	1768545120878067712

Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures

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