Transport mechanism through metal-cobaltite interfaces

The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temper...

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Detalles Bibliográficos
Autor principal:	Acha, Carlos Enrique
Publicado:	2016
Materias:	Cobalt compounds Dielectric properties Ohmic contacts Organometallics Circuit modeling High-resistance state Insulating phasis Metal organic deposition Microscopic description Resistive switching Temperature dependence Transport mechanism Temperature distribution
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v109_n1_p_Acha http://hdl.handle.net/20.500.12110/paper_00036951_v109_n1_p_Acha
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00036951_v109_n1_p_Acha
record_format	dspace
spelling	paper:paper_00036951_v109_n1_p_Acha2023-06-08T14:24:39Z Transport mechanism through metal-cobaltite interfaces Acha, Carlos Enrique Cobalt compounds Dielectric properties Ohmic contacts Organometallics Circuit modeling High-resistance state Insulating phasis Metal organic deposition Microscopic description Resistive switching Temperature dependence Transport mechanism Temperature distribution The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties. © 2016 Author(s). Fil:Acha, C. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2016 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v109_n1_p_Acha http://hdl.handle.net/20.500.12110/paper_00036951_v109_n1_p_Acha
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Cobalt compounds Dielectric properties Ohmic contacts Organometallics Circuit modeling High-resistance state Insulating phasis Metal organic deposition Microscopic description Resistive switching Temperature dependence Transport mechanism Temperature distribution
spellingShingle	Cobalt compounds Dielectric properties Ohmic contacts Organometallics Circuit modeling High-resistance state Insulating phasis Metal organic deposition Microscopic description Resistive switching Temperature dependence Transport mechanism Temperature distribution Acha, Carlos Enrique Transport mechanism through metal-cobaltite interfaces
topic_facet	Cobalt compounds Dielectric properties Ohmic contacts Organometallics Circuit modeling High-resistance state Insulating phasis Metal organic deposition Microscopic description Resistive switching Temperature dependence Transport mechanism Temperature distribution
description	The resistive switching (RS) properties as a function of temperature were studied for Ag/La1-xSrxCoO3 (LSCO) interfaces. The LSCO is a fully relaxed 100 nm film grown by metal organic deposition on a LaAlO3 substrate. Both low and a high resistance states were set at room temperature, and the temperature dependence of their current-voltage (IV) characteristics was measured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties. © 2016 Author(s).
author	Acha, Carlos Enrique
author_facet	Acha, Carlos Enrique
author_sort	Acha, Carlos Enrique
title	Transport mechanism through metal-cobaltite interfaces
title_short	Transport mechanism through metal-cobaltite interfaces
title_full	Transport mechanism through metal-cobaltite interfaces
title_fullStr	Transport mechanism through metal-cobaltite interfaces
title_full_unstemmed	Transport mechanism through metal-cobaltite interfaces
title_sort	transport mechanism through metal-cobaltite interfaces
publishDate	2016
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v109_n1_p_Acha http://hdl.handle.net/20.500.12110/paper_00036951_v109_n1_p_Acha
work_keys_str_mv	AT achacarlosenrique transportmechanismthroughmetalcobaltiteinterfaces
_version_	1768544528468279296

Transport mechanism through metal-cobaltite interfaces

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