Tuning the resistive switching properties of TiO2-x films
We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accesse...
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| Autores principales: | Rozenberg, Marcelo Javier, Levy, Pablo Eduardo |
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| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v106_n12_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi |
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