Tuning the resistive switching properties of TiO2-x films

We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accesse...

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Detalles Bibliográficos
Autores principales:	Rozenberg, Marcelo Javier, Levy, Pablo Eduardo
Publicado:	2015
Materias:	Deposition Oxygen Switching Switching systems Temperature distribution Conductive filaments Device characteristics Electrical characteristic Fabrication parameters Oxygen vacancy concentration Resistive switching behaviors Resistive switching devices Temperature dependence Oxygen vacancies
Acceso en línea:	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v106_n12_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi
Aporte de:	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA) de Universidad de Buenos Aires

id	paper:paper_00036951_v106_n12_p_Ghenzi
record_format	dspace
spelling	paper:paper_00036951_v106_n12_p_Ghenzi2023-06-08T14:24:38Z Tuning the resistive switching properties of TiO2-x films Rozenberg, Marcelo Javier Levy, Pablo Eduardo Deposition Oxygen Switching Switching systems Temperature distribution Conductive filaments Device characteristics Electrical characteristic Fabrication parameters Oxygen vacancy concentration Resistive switching behaviors Resistive switching devices Temperature dependence Oxygen vacancies We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state. © 2015 AIP Publishing LLC. Fil:Rozenberg, M.J. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. Fil:Levy, P. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina. 2015 https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v106_n12_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi
institution	Universidad de Buenos Aires
institution_str	I-28
repository_str	R-134
collection	Biblioteca Digital - Facultad de Ciencias Exactas y Naturales (UBA)
topic	Deposition Oxygen Switching Switching systems Temperature distribution Conductive filaments Device characteristics Electrical characteristic Fabrication parameters Oxygen vacancy concentration Resistive switching behaviors Resistive switching devices Temperature dependence Oxygen vacancies
spellingShingle	Deposition Oxygen Switching Switching systems Temperature distribution Conductive filaments Device characteristics Electrical characteristic Fabrication parameters Oxygen vacancy concentration Resistive switching behaviors Resistive switching devices Temperature dependence Oxygen vacancies Rozenberg, Marcelo Javier Levy, Pablo Eduardo Tuning the resistive switching properties of TiO2-x films
topic_facet	Deposition Oxygen Switching Switching systems Temperature distribution Conductive filaments Device characteristics Electrical characteristic Fabrication parameters Oxygen vacancy concentration Resistive switching behaviors Resistive switching devices Temperature dependence Oxygen vacancies
description	We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively different device characteristics were accessed in the same system, namely, standard bipolar resistive switching, electroforming-free devices, and devices with multi-step breakdown. We propose that small variations in the oxygen/ argon flow ratio result in relevant changes of the oxygen vacancy concentration, which is the key parameter determining the resistive switching behavior. The coexistence of percolative or non-percolative conductive filaments is also discussed. Finally, the hypothesis is verified by means of the temperature dependence of the devices in low resistance state. © 2015 AIP Publishing LLC.
author	Rozenberg, Marcelo Javier Levy, Pablo Eduardo
author_facet	Rozenberg, Marcelo Javier Levy, Pablo Eduardo
author_sort	Rozenberg, Marcelo Javier
title	Tuning the resistive switching properties of TiO2-x films
title_short	Tuning the resistive switching properties of TiO2-x films
title_full	Tuning the resistive switching properties of TiO2-x films
title_fullStr	Tuning the resistive switching properties of TiO2-x films
title_full_unstemmed	Tuning the resistive switching properties of TiO2-x films
title_sort	tuning the resistive switching properties of tio2-x films
publishDate	2015
url	https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_00036951_v106_n12_p_Ghenzi http://hdl.handle.net/20.500.12110/paper_00036951_v106_n12_p_Ghenzi
work_keys_str_mv	AT rozenbergmarcelojavier tuningtheresistiveswitchingpropertiesoftio2xfilms AT levypabloeduardo tuningtheresistiveswitchingpropertiesoftio2xfilms
_version_	1768543397723766784

Tuning the resistive switching properties of TiO2-x films

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