New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering

A new low-voltage electrically tunable transconductor is presented. Its transconductance can be settled by means of a ratio between a reference current and a reference voltage rendering the circuit independent of technological parameters, to a first order approach. This property allows, to some exte...

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Autores principales: Dualibe, Fortunato Carlos Augusto, Petrashin, Pablo Antonio, Toledo, Luis, Lancioni, Walter José
Formato: Documento de conferencia
Lenguaje:Español
Publicado: 2005
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Acceso en línea:http://pa.bibdigital.ucc.edu.ar/3986/1/A_Dualibe_Petrashin_Toledo_Lancioni.pdf
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spelling I38-R144-39862025-07-15T18:25:20Z http://pa.bibdigital.ucc.edu.ar/3986/ New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering Dualibe, Fortunato Carlos Augusto Petrashin, Pablo Antonio Toledo, Luis Lancioni, Walter José TK ingeniería eléctrica. Ingeniería electrónica nuclear A new low-voltage electrically tunable transconductor is presented. Its transconductance can be settled by means of a ratio between a reference current and a reference voltage rendering the circuit independent of technological parameters, to a first order approach. This property allows, to some extent, reusing the transconductor in several CMOS processes. A kind of linear current division strategy turns also the transconductance inversely proportional to a product of two ratios between transistors' sizes that can be chosen so as to meet the desired Gm order of magnitude. This feature, together with a low-current biasing policy, is exploited in order to get a transconductance in the range of InS, as needed for very low-frequency filters. For a 2V supply and a 20pF load capacitor, an integrator characterization in a 1.6μm CMOS technology revealed a unity-gain frequency fT of 10Hz, a current consumption of 220nA and an input-referred noise of 2.2μVrms. Using this transconductor, a 10Hz third-order low-pass transconductance-capacitor (Gm-C) Butterworth filter was designed. It is intended for smoothing the output of a chopper amplifier. The filter shows acceptable performance in terms of die area (1.9mm2) and power consumption (1μW), as desired for Low-Voltage Low-Power (LVLP) applications. 2005-09-07 info:eu-repo/semantics/conferenceObject info:eu-repo/semantics/closedAccess application/pdf spa http://pa.bibdigital.ucc.edu.ar/3986/1/A_Dualibe_Petrashin_Toledo_Lancioni.pdf Dualibe, Fortunato Carlos Augusto ORCID: https://orcid.org/0000-0002-2889-315X <https://orcid.org/0000-0002-2889-315X>, Petrashin, Pablo Antonio ORCID: https://orcid.org/0000-0003-2607-6196 <https://orcid.org/0000-0003-2607-6196>, Toledo, Luis and Lancioni, Walter José (2005) New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering. In: 18th Symposium on Integrated Circuits and Systems Design. info:eu-repo/semantics/altIdentifier/doi/10.1109/SBCCI.2005.4286858
institution Universidad Católica de Córdoba
institution_str I-38
repository_str R-144
collection Producción Académica Universidad Católica de Córdoba (UCCor)
language Español
orig_language_str_mv spa
topic TK ingeniería eléctrica. Ingeniería electrónica nuclear
spellingShingle TK ingeniería eléctrica. Ingeniería electrónica nuclear
Dualibe, Fortunato Carlos Augusto
Petrashin, Pablo Antonio
Toledo, Luis
Lancioni, Walter José
New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering
topic_facet TK ingeniería eléctrica. Ingeniería electrónica nuclear
description A new low-voltage electrically tunable transconductor is presented. Its transconductance can be settled by means of a ratio between a reference current and a reference voltage rendering the circuit independent of technological parameters, to a first order approach. This property allows, to some extent, reusing the transconductor in several CMOS processes. A kind of linear current division strategy turns also the transconductance inversely proportional to a product of two ratios between transistors' sizes that can be chosen so as to meet the desired Gm order of magnitude. This feature, together with a low-current biasing policy, is exploited in order to get a transconductance in the range of InS, as needed for very low-frequency filters. For a 2V supply and a 20pF load capacitor, an integrator characterization in a 1.6μm CMOS technology revealed a unity-gain frequency fT of 10Hz, a current consumption of 220nA and an input-referred noise of 2.2μVrms. Using this transconductor, a 10Hz third-order low-pass transconductance-capacitor (Gm-C) Butterworth filter was designed. It is intended for smoothing the output of a chopper amplifier. The filter shows acceptable performance in terms of die area (1.9mm2) and power consumption (1μW), as desired for Low-Voltage Low-Power (LVLP) applications.
format Documento de conferencia
author Dualibe, Fortunato Carlos Augusto
Petrashin, Pablo Antonio
Toledo, Luis
Lancioni, Walter José
author_facet Dualibe, Fortunato Carlos Augusto
Petrashin, Pablo Antonio
Toledo, Luis
Lancioni, Walter José
author_sort Dualibe, Fortunato Carlos Augusto
title New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering
title_short New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering
title_full New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering
title_fullStr New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering
title_full_unstemmed New low-voltage electrically tunable triode-MOSFET transconductor and its application to low-frequency Gm-C filtering
title_sort new low-voltage electrically tunable triode-mosfet transconductor and its application to low-frequency gm-c filtering
publishDate 2005
url http://pa.bibdigital.ucc.edu.ar/3986/1/A_Dualibe_Petrashin_Toledo_Lancioni.pdf
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AT toledoluis newlowvoltageelectricallytunabletriodemosfettransconductoranditsapplicationtolowfrequencygmcfiltering
AT lancioniwalterjose newlowvoltageelectricallytunabletriodemosfettransconductoranditsapplicationtolowfrequencygmcfiltering
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