Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process

An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current s...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Ronis, Nicolás, García Inza, Mariano
Formato: Artículo publishedVersion
Lenguaje:Inglés
Publicado: Universidad de Buenos Aires. Facultad de Ingeniería 2017
Materias:
Acceso en línea:https://elektron.fi.uba.ar/index.php/elektron/article/view/5
https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=5_oai
Aporte de:

Ejemplares similares