Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current s...
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Artículo publishedVersion |
| Lenguaje: | Inglés |
| Publicado: |
Universidad de Buenos Aires. Facultad de Ingeniería
2017
|
| Materias: | |
| Acceso en línea: | https://elektron.fi.uba.ar/index.php/elektron/article/view/5 https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=5_oai |
| Aporte de: |
| id |
I28-R145-5_oai |
|---|---|
| record_format |
dspace |
| spelling |
I28-R145-5_oai2025-06-26 Ronis, Nicolás García Inza, Mariano 2017-07-10 An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current spinning system to remove the amplifier and Hall Plate offset were designed and placed in the same chip. The results show a better sensitivity performance in the cross-shaped Hall Plate and a linear behavior of the sensor in the range of operation tested. Un sensor Hall integrado fue diseñado y fabricado en un proceso CMOS ONC5N/F de 0.5μm provisto por MOSIS. Dentro del mismo, cuatro placas Hall con distintas geometrías fueron integradas con el objetivo de analizar su sensibilidad y resistencia desde -40°C hasta 165°C. Dentro del mismo chip también se integraron y diseñaron un amplificador y un sistema de rotación de corriente para remover su offset. Los resultados muestran una mayor sensibilidad en la placa Hall con forma de cruz y un comportamiento lineal del sensor dentro de su rango de operación. application/pdf https://elektron.fi.uba.ar/index.php/elektron/article/view/5 10.37537/rev.elektron.1.1.5.2017 eng Universidad de Buenos Aires. Facultad de Ingeniería https://elektron.fi.uba.ar/index.php/elektron/article/view/5/21 https://elektron.fi.uba.ar/index.php/elektron/article/view/5/165 info:eu-repo/semantics/openAccess http://creativecommons.org/licenses/by-nc-nd/4.0 Elektron; Vol 1, No 1 (2017) 2525-0159 Hall Plate; CMOS design; Solid state magnetic field sensor. Hall Plate; CMOS diseño; Sensor de campo magnético de estado sólido. Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion info:ar-repo/semantics/artículo https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=5_oai |
| institution |
Universidad de Buenos Aires |
| institution_str |
I-28 |
| repository_str |
R-145 |
| collection |
Repositorio Digital de la Universidad de Buenos Aires (UBA) |
| language |
Inglés |
| orig_language_str_mv |
eng |
| topic |
Hall Plate; CMOS design; Solid state magnetic field sensor. Hall Plate; CMOS diseño; Sensor de campo magnético de estado sólido. |
| spellingShingle |
Hall Plate; CMOS design; Solid state magnetic field sensor. Hall Plate; CMOS diseño; Sensor de campo magnético de estado sólido. Ronis, Nicolás García Inza, Mariano Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process |
| topic_facet |
Hall Plate; CMOS design; Solid state magnetic field sensor. Hall Plate; CMOS diseño; Sensor de campo magnético de estado sólido. |
| description |
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current spinning system to remove the amplifier and Hall Plate offset were designed and placed in the same chip. The results show a better sensitivity performance in the cross-shaped Hall Plate and a linear behavior of the sensor in the range of operation tested. |
| format |
Artículo publishedVersion Artículo |
| author |
Ronis, Nicolás García Inza, Mariano |
| author_facet |
Ronis, Nicolás García Inza, Mariano |
| author_sort |
Ronis, Nicolás |
| title |
Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process |
| title_short |
Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process |
| title_full |
Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process |
| title_fullStr |
Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process |
| title_full_unstemmed |
Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process |
| title_sort |
design and evaluation of a hall sensor with different hall plate geometries in a 0.5µm cmos process |
| publisher |
Universidad de Buenos Aires. Facultad de Ingeniería |
| publishDate |
2017 |
| url |
https://elektron.fi.uba.ar/index.php/elektron/article/view/5 https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=5_oai |
| work_keys_str_mv |
AT ronisnicolas designandevaluationofahallsensorwithdifferenthallplategeometriesina05μmcmosprocess AT garciainzamariano designandevaluationofahallsensorwithdifferenthallplategeometriesina05μmcmosprocess |
| _version_ |
1840330256392650752 |