Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current s...
Guardado en:
| Autores principales: | , |
|---|---|
| Formato: | Artículo publishedVersion |
| Lenguaje: | Inglés |
| Publicado: |
Universidad de Buenos Aires. Facultad de Ingeniería
2017
|
| Materias: | |
| Acceso en línea: | https://elektron.fi.uba.ar/index.php/elektron/article/view/5 https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=5_oai |
| Aporte de: |
| Sumario: | An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current spinning system to remove the amplifier and Hall Plate offset were designed and placed in the same chip. The results show a better sensitivity performance in the cross-shaped Hall Plate and a linear behavior of the sensor in the range of operation tested. |
|---|