Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate o...

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Detalles Bibliográficos
Autores principales: Sambuco Salomone, Lucas, Garcia-Inza, Mariano, Carbonetto, Sebastián, Faigón, Adrián
Formato: Artículo publishedVersion
Lenguaje:Inglés
Publicado: FIUBA 2021
Materias:
radiation effects
floating gate cells
numerical modeling
efectos de radiación
celdas de puerta flotante
modelización numérica
Acceso en línea:https://elektron.fi.uba.ar/elektron/article/view/136
https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=136_oai
Aporte de:
Repositorio Digital de la Universidad de Buenos Aires (UBA) de Universidad de Buenos Aires
Descripción
Sumario:The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate of radiation-generated holes. A simplified analytical model is considered, and its limitations are discussed.

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