Numerical modeling of radiation-induced charge loss in CMOS floating gate cells

The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate o...

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Autores principales: Sambuco Salomone, Lucas, Garcia-Inza, Mariano, Carbonetto, Sebastián, Faigón, Adrián
Formato: Artículo publishedVersion
Lenguaje:Inglés
Publicado: FIUBA 2021
Materias:
radiation effects
floating gate cells
numerical modeling
efectos de radiación
celdas de puerta flotante
modelización numérica
Acceso en línea:https://elektron.fi.uba.ar/elektron/article/view/136
https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=136_oai
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Repositorio Digital de la Universidad de Buenos Aires (UBA) de Universidad de Buenos Aires
id I28-R145-136_oai
record_format dspace
spelling I28-R145-136_oai2026-02-11 Sambuco Salomone, Lucas Garcia-Inza, Mariano Carbonetto, Sebastián Faigón, Adrián 2021-12-15 The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate of radiation-generated holes. A simplified analytical model is considered, and its limitations are discussed. Mediante un modelo numérico desarrollado recientemente y basado en principios físicos, se estudia la respuesta a la radiación de celdas de compuerta flotante programadas/borradas. El rol que juega la captura de carga en los óxidos en el desplazamiento total de la tensión umbral con la dosis es debidamente evaluado a través de la variación de la tasa de captura de los huecos generados por radiación. Se considera un modelo analítico simplificado y se discuten sus limitaciones. application/pdf text/html https://elektron.fi.uba.ar/elektron/article/view/136 10.37537/rev.elektron.5.2.136.2021 eng FIUBA https://elektron.fi.uba.ar/elektron/article/view/136/262 https://elektron.fi.uba.ar/elektron/article/view/136/267 Derechos de autor 2021 Lucas Sambuco Salomone, Mariano Garcia-Inza, Adrián Faigón Elektron Journal; Vol. 5 No. 2 (2021); 100-104 Revista Elektron; Vol. 5 Núm. 2 (2021); 100-104 Revista Elektron; v. 5 n. 2 (2021); 100-104 2525-0159 2525-0159 radiation effects floating gate cells numerical modeling efectos de radiación celdas de puerta flotante modelización numérica Numerical modeling of radiation-induced charge loss in CMOS floating gate cells Modelización numérica de la pérdida de carga inducida por radiación en celdas CMOS de puerta flotante info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=136_oai
institution Universidad de Buenos Aires
institution_str I-28
repository_str R-145
collection Repositorio Digital de la Universidad de Buenos Aires (UBA)
language Inglés
orig_language_str_mv eng
topic radiation effects
floating gate cells
numerical modeling
efectos de radiación
celdas de puerta flotante
modelización numérica
spellingShingle radiation effects
floating gate cells
numerical modeling
efectos de radiación
celdas de puerta flotante
modelización numérica
Sambuco Salomone, Lucas
Garcia-Inza, Mariano
Carbonetto, Sebastián
Faigón, Adrián
Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
topic_facet radiation effects
floating gate cells
numerical modeling
efectos de radiación
celdas de puerta flotante
modelización numérica
description The radiation response of programmed/erased floating gate cells is studied by numerical simulations through a recently developed physics-based numerical model. The role played by oxide trapped charge in the overall threshold voltage shift with dose is properly evaluated by varying the capture rate of radiation-generated holes. A simplified analytical model is considered, and its limitations are discussed.
format Artículo
publishedVersion
author Sambuco Salomone, Lucas
Garcia-Inza, Mariano
Carbonetto, Sebastián
Faigón, Adrián
author_facet Sambuco Salomone, Lucas
Garcia-Inza, Mariano
Carbonetto, Sebastián
Faigón, Adrián
author_sort Sambuco Salomone, Lucas
title Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
title_short Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
title_full Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
title_fullStr Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
title_full_unstemmed Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
title_sort numerical modeling of radiation-induced charge loss in cmos floating gate cells
publisher FIUBA
publishDate 2021
url https://elektron.fi.uba.ar/elektron/article/view/136
https://repositoriouba.sisbi.uba.ar/gsdl/cgi-bin/library.cgi?a=d&c=elektron&d=136_oai
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