Analysis of the Si II and Si III DR Processes Applied to Stellar Envelopes

In an earlier attempt to explain the observed excess in the IR flux of Be stars, we have analyzed the dielectronic recombination (DR) of Mg II in stellar envelopes and the influence of this atomic process on the stellar flux. In the present paper, we study the DR of other ions with astrophysical sig...

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Detalles Bibliográficos
Autores principales: Cruzado, Alicia, Ringuelet, Adela Emilia, Di Rocco, Héctor Oscar
Formato: Articulo
Lenguaje:Inglés
Publicado: 2001
Materias:
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/2083
http://iopscience.iop.org/article/10.1086/321375/fulltext/
Aporte de:SEDICI (UNLP) de Universidad Nacional de La Plata Ver origen
Descripción
Sumario:In an earlier attempt to explain the observed excess in the IR flux of Be stars, we have analyzed the dielectronic recombination (DR) of Mg II in stellar envelopes and the influence of this atomic process on the stellar flux. In the present paper, we study the DR of other ions with astrophysical significance, namely, Si II and Si III, and reach the conclusion that Si II may also contribute to the IR excess in Be stars.