Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study

Ab initio electronic structure calculations were performed to study the effect of V-doping on the structural, electronic, and magnetic properties of tin dioxide (Sn₁₋ₓVₓO₂, x: 0.042−0.125). Calculations have been performed using pseudopotentials and plane-wave and full potential linearized augmented...

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Autores principales: Medina Chanduví, Hugo Harold, Mudarra Navarro, Azucena Marisol, Bilovol, Vitaliy, Errico, Leonardo Antonio, Gil Rebaza, Arles Víctor
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Publicado: 2021
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Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/162186
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spelling I19-R120-10915-1621862024-02-01T20:09:24Z http://sedici.unlp.edu.ar/handle/10915/162186 Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study Medina Chanduví, Hugo Harold Mudarra Navarro, Azucena Marisol Bilovol, Vitaliy Errico, Leonardo Antonio Gil Rebaza, Arles Víctor 2021 2024-02-01T17:49:10Z en Física Química chemical calculations electrical conductivity energy impurities oxidation state Ab initio electronic structure calculations were performed to study the effect of V-doping on the structural, electronic, and magnetic properties of tin dioxide (Sn₁₋ₓVₓO₂, x: 0.042−0.125). Calculations have been performed using pseudopotentials and plane-wave and full potential linearized augmented plane-wave methods. State-of-the-art Heyd−Scuseria−Ernzerhof (HSE06) exchange−correlation hybrid functional and the Tran−Blaha-modified Becke−Johnson (TB-mBJ) exchange potential were employed. Our calculations showed that V⁴⁺ substitutionally replaces Sn⁴⁺ ions inducing a reduction of the volume cell of SnO₂ and shortening of the metal−oxygen nearest neighbor bond lengths. Spin polarization at the V sites is predicted. Our results indicate that the magnetic ground state of the resulting system is paramagnetic. TB-mBJ and HSE06 accurately describe the experimentally reported dependence of the band gap with x. Our theoretical results for the hyperfine parameters at the Sn sites are in excellent agreement with Mössbauer experiments. Hyperfine parameters at the V sites are also presented. Facultad de Ciencias Exactas Instituto de Física La Plata Articulo Articulo http://creativecommons.org/licenses/by/4.0/ Creative Commons Attribution 4.0 International (CC BY 4.0) application/pdf 11702-11713
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Inglés
topic Física
Química
chemical calculations
electrical conductivity
energy
impurities
oxidation state
spellingShingle Física
Química
chemical calculations
electrical conductivity
energy
impurities
oxidation state
Medina Chanduví, Hugo Harold
Mudarra Navarro, Azucena Marisol
Bilovol, Vitaliy
Errico, Leonardo Antonio
Gil Rebaza, Arles Víctor
Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study
topic_facet Física
Química
chemical calculations
electrical conductivity
energy
impurities
oxidation state
description Ab initio electronic structure calculations were performed to study the effect of V-doping on the structural, electronic, and magnetic properties of tin dioxide (Sn₁₋ₓVₓO₂, x: 0.042−0.125). Calculations have been performed using pseudopotentials and plane-wave and full potential linearized augmented plane-wave methods. State-of-the-art Heyd−Scuseria−Ernzerhof (HSE06) exchange−correlation hybrid functional and the Tran−Blaha-modified Becke−Johnson (TB-mBJ) exchange potential were employed. Our calculations showed that V⁴⁺ substitutionally replaces Sn⁴⁺ ions inducing a reduction of the volume cell of SnO₂ and shortening of the metal−oxygen nearest neighbor bond lengths. Spin polarization at the V sites is predicted. Our results indicate that the magnetic ground state of the resulting system is paramagnetic. TB-mBJ and HSE06 accurately describe the experimentally reported dependence of the band gap with x. Our theoretical results for the hyperfine parameters at the Sn sites are in excellent agreement with Mössbauer experiments. Hyperfine parameters at the V sites are also presented.
format Articulo
Articulo
author Medina Chanduví, Hugo Harold
Mudarra Navarro, Azucena Marisol
Bilovol, Vitaliy
Errico, Leonardo Antonio
Gil Rebaza, Arles Víctor
author_facet Medina Chanduví, Hugo Harold
Mudarra Navarro, Azucena Marisol
Bilovol, Vitaliy
Errico, Leonardo Antonio
Gil Rebaza, Arles Víctor
author_sort Medina Chanduví, Hugo Harold
title Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study
title_short Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study
title_full Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study
title_fullStr Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study
title_full_unstemmed Structural, Electronic, Magnetic, and Hyperfine Properties of V‑doped SnO₂ (Sn₁₋ₓVₓO₂, x: 0, 0.042, 0.084, and 0.125) : A DFT-Based Study
title_sort structural, electronic, magnetic, and hyperfine properties of v‑doped sno₂ (sn₁₋ₓvₓo₂, x: 0, 0.042, 0.084, and 0.125) : a dft-based study
publishDate 2021
url http://sedici.unlp.edu.ar/handle/10915/162186
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