“After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
The phenomena called “electron-capture after-effects” (ECAE) in the pioneering works from La Plata group in the eighties is produced by the electronic relaxation process that occur in the probe-atom ¹¹¹Cd subsequent to the electron-capture (EC) nuclear decay of its father nuclide ¹¹¹In. The ECAE is...
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| Autores principales: | , , |
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| Formato: | Objeto de conferencia |
| Lenguaje: | Español |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | http://sedici.unlp.edu.ar/handle/10915/147270 |
| Aporte de: |
| Sumario: | The phenomena called “electron-capture after-effects” (ECAE) in the pioneering works from La Plata group in the eighties is produced by the electronic relaxation process that occur in the probe-atom ¹¹¹Cd subsequent to the electron-capture (EC) nuclear decay of its father nuclide ¹¹¹In. The ECAE is reflected in time-differential perturbed γ-γ angular correlations (TDPAC) experiments by the presence of time-dependent hyperfine (dynamic) interactions, reversible with the measuring temperature.
We propose here that the electronic relaxation of ¹¹¹Cd generates different electronic configurations at the probe-atom, and therefore different electric-field gradients (EFG), which originates the observed dynamic hyperfine interaction. These electronic configurations may survive during the time window of the TDPAC measurement (τ 1/2=84.1 ns, in this case), from a highly ionized initial atomic charge state (generated after the EC nuclear decay) to a final stable state that is not necessarily the ground neutral state, and which depends on the temperature and nature of the host system |
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