“After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles

The phenomena called “electron-capture after-effects” (ECAE) in the pioneering works from La Plata group in the eighties is produced by the electronic relaxation process that occur in the probe-atom ¹¹¹Cd subsequent to the electron-capture (EC) nuclear decay of its father nuclide ¹¹¹In. The ECAE is...

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Autores principales: Darriba, Germán Nicolás, Rentería, Mario, Vianden, R.
Formato: Objeto de conferencia
Lenguaje:Español
Publicado: 2016
Materias:
Física
Electronic relaxation
Hyperfine interaction
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/147270
Aporte de:
SEDICI (UNLP) de Universidad Nacional de La Plata
id I19-R120-10915-147270
record_format dspace
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Español
topic Física
Electronic relaxation
Hyperfine interaction
spellingShingle Física
Electronic relaxation
Hyperfine interaction
Darriba, Germán Nicolás
Rentería, Mario
Vianden, R.
“After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
topic_facet Física
Electronic relaxation
Hyperfine interaction
description The phenomena called “electron-capture after-effects” (ECAE) in the pioneering works from La Plata group in the eighties is produced by the electronic relaxation process that occur in the probe-atom ¹¹¹Cd subsequent to the electron-capture (EC) nuclear decay of its father nuclide ¹¹¹In. The ECAE is reflected in time-differential perturbed γ-γ angular correlations (TDPAC) experiments by the presence of time-dependent hyperfine (dynamic) interactions, reversible with the measuring temperature. We propose here that the electronic relaxation of ¹¹¹Cd generates different electronic configurations at the probe-atom, and therefore different electric-field gradients (EFG), which originates the observed dynamic hyperfine interaction. These electronic configurations may survive during the time window of the TDPAC measurement (τ 1/2=84.1 ns, in this case), from a highly ionized initial atomic charge state (generated after the EC nuclear decay) to a final stable state that is not necessarily the ground neutral state, and which depends on the temperature and nature of the host system
format Objeto de conferencia
Objeto de conferencia
author Darriba, Germán Nicolás
Rentería, Mario
Vianden, R.
author_facet Darriba, Germán Nicolás
Rentería, Mario
Vianden, R.
author_sort Darriba, Germán Nicolás
title “After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
title_short “After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
title_full “After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
title_fullStr “After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
title_full_unstemmed “After-effects” in ¹¹¹In(®¹¹¹Cd)-doped Al₂O₃ semiconductor: a modelization from first principles
title_sort “after-effects” in ¹¹¹in(®¹¹¹cd)-doped al₂o₃ semiconductor: a modelization from first principles
publishDate 2016
url http://sedici.unlp.edu.ar/handle/10915/147270
work_keys_str_mv AT darribagermannicolas aftereffectsin111in111cddopedal2o3semiconductoramodelizationfromfirstprinciples
AT renteriamario aftereffectsin111in111cddopedal2o3semiconductoramodelizationfromfirstprinciples
AT viandenr aftereffectsin111in111cddopedal2o3semiconductoramodelizationfromfirstprinciples
bdutipo_str Repositorios
_version_ 1764820461189857282

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