Influence of impurities in polygonization of fcc metals of low stacking fault energy

Several studies performed on metal polygonization [1-3] indicate that impurities lock the dislocations and prevent their motion during a thermal treatment of previously deformed crystals. Nevertheless, the study made on polygonization of Cu showed contradictory results. Young [4, 5] and Wei et al. [...

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Autores principales: Bebczuk de Cusminsky, Juana, Niemela, E. T.
Formato: Articulo
Lenguaje:Inglés
Publicado: 1977
Materias:
Ingeniería en Materiales
fcc metal
impurities
metal polygonization
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/134093
Aporte de:
SEDICI (UNLP) de Universidad Nacional de La Plata
id I19-R120-10915-134093
record_format dspace
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Inglés
topic Ingeniería en Materiales
fcc metal
impurities
metal polygonization
spellingShingle Ingeniería en Materiales
fcc metal
impurities
metal polygonization
Bebczuk de Cusminsky, Juana
Niemela, E. T.
Influence of impurities in polygonization of fcc metals of low stacking fault energy
topic_facet Ingeniería en Materiales
fcc metal
impurities
metal polygonization
description Several studies performed on metal polygonization [1-3] indicate that impurities lock the dislocations and prevent their motion during a thermal treatment of previously deformed crystals. Nevertheless, the study made on polygonization of Cu showed contradictory results. Young [4, 5] and Wei et al. [6] observed polygonization in OFHC Cu, but not in 99.999% Cu, and pointed out that polygonization in Cu is very slow and occurs upon prolonged annealing at temperatures near the melting point. Seeger and Schoeck [7, 8] suggested that, in metals of low stacking fault energy like Cu, Ag and Au, the dislocations would be extended into widely separated partials, and thus climbing would be difficult. The fact that polygonization has been observed [4, 5] in OFHC Cu, but not in 99.999% Cu, was explained by considering that impurities tend to allow the partial dislocations to recombine. More recently, French workers [9 - 13], showed that pure Cu polygonizes more easily than impure. In order to clarify the effect of impurities in climbing of the extended dislocations in fcc metals, and to find the effect of the stacking fault energy, the present study was carried out in Cu and Ag crystals.
format Articulo
Articulo
author Bebczuk de Cusminsky, Juana
Niemela, E. T.
author_facet Bebczuk de Cusminsky, Juana
Niemela, E. T.
author_sort Bebczuk de Cusminsky, Juana
title Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_short Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_full Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_fullStr Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_full_unstemmed Influence of impurities in polygonization of fcc metals of low stacking fault energy
title_sort influence of impurities in polygonization of fcc metals of low stacking fault energy
publishDate 1977
url http://sedici.unlp.edu.ar/handle/10915/134093
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AT niemelaet influenceofimpuritiesinpolygonizationoffccmetalsoflowstackingfaultenergy
bdutipo_str Repositorios
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