Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)

Chemical vapor deposition (CVD) is used to prepare research-grade heterostructures and to produce the majority of industrially important thin films.[1] In particular, CVD tungsten films are used for many technological applications.[2,3] In CVD an external source maintains a fixed concentration of re...

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Autores principales: Vázquez, Luís, Salvarezza, Roberto Carlos, Albano, Ezequiel Vicente, Arvia, Alejandro Jorge, Hernández Creus, Alberto, Levy, Roland A., Albella, José M.
Formato: Articulo Comunicacion
Lenguaje:Inglés
Publicado: 1998
Materias:
Ciencias Exactas
Química
Chemical vapor deposition
W surfaces grown
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/127524
Aporte de:
SEDICI (UNLP) de Universidad Nacional de La Plata
id I19-R120-10915-127524
record_format dspace
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Inglés
topic Ciencias Exactas
Química
Chemical vapor deposition
W surfaces grown
spellingShingle Ciencias Exactas
Química
Chemical vapor deposition
W surfaces grown
Vázquez, Luís
Salvarezza, Roberto Carlos
Albano, Ezequiel Vicente
Arvia, Alejandro Jorge
Hernández Creus, Alberto
Levy, Roland A.
Albella, José M.
Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)
topic_facet Ciencias Exactas
Química
Chemical vapor deposition
W surfaces grown
description Chemical vapor deposition (CVD) is used to prepare research-grade heterostructures and to produce the majority of industrially important thin films.[1] In particular, CVD tungsten films are used for many technological applications.[2,3] In CVD an external source maintains a fixed concentration of reactant molecules at a distance above the film surface.[4] Then, gas diffusion drives the molecules through the diffusion layer[2] towards the film surface. At the film interface a reaction must occur before new material is incorporated into the solid. Kinetic studies show that two growth regimes are usually present in CVD. At a low deposition temperature (low rate, regime I) the kinetics is controlled by the surface reaction, whereas at a high temperature (high rate, regime II), mass transport of reactants to, or reaction products from, the surface is the rate-controlling step.
format Articulo
Comunicacion
author Vázquez, Luís
Salvarezza, Roberto Carlos
Albano, Ezequiel Vicente
Arvia, Alejandro Jorge
Hernández Creus, Alberto
Levy, Roland A.
Albella, José M.
author_facet Vázquez, Luís
Salvarezza, Roberto Carlos
Albano, Ezequiel Vicente
Arvia, Alejandro Jorge
Hernández Creus, Alberto
Levy, Roland A.
Albella, José M.
author_sort Vázquez, Luís
title Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)
title_short Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)
title_full Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)
title_fullStr Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)
title_full_unstemmed Surface Morphology Evolution of Chemical Vapor-Deposited Tungsten Films on Si(100)
title_sort surface morphology evolution of chemical vapor-deposited tungsten films on si(100)
publishDate 1998
url http://sedici.unlp.edu.ar/handle/10915/127524
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