Roughening kinetics of chemical vapor deposited copper films on Si(100)

The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic...

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Autores principales: Vázquez, L., Albella, J. M., Salvarezza, Roberto Carlos, Arvia, Alejandro Jorge, Levy, R. A., Perese, D.
Formato: Articulo
Lenguaje:Inglés
Publicado: 1996
Materias:
Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
Acceso en línea:http://sedici.unlp.edu.ar/handle/10915/126508
https://aip.scitation.org/doi/10.1063/1.115954
Aporte de:
SEDICI (UNLP) de Universidad Nacional de La Plata
id I19-R120-10915-126508
record_format dspace
institution Universidad Nacional de La Plata
institution_str I-19
repository_str R-120
collection SEDICI (UNLP)
language Inglés
topic Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
spellingShingle Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
Vázquez, L.
Albella, J. M.
Salvarezza, Roberto Carlos
Arvia, Alejandro Jorge
Levy, R. A.
Perese, D.
Roughening kinetics of chemical vapor deposited copper films on Si(100)
topic_facet Ciencias Exactas
Química
copper films
low pressure chemical vapor deposition
scanning tunneling microscopy
description The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of a is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.
format Articulo
Articulo
author Vázquez, L.
Albella, J. M.
Salvarezza, Roberto Carlos
Arvia, Alejandro Jorge
Levy, R. A.
Perese, D.
author_facet Vázquez, L.
Albella, J. M.
Salvarezza, Roberto Carlos
Arvia, Alejandro Jorge
Levy, R. A.
Perese, D.
author_sort Vázquez, L.
title Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_short Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_full Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_fullStr Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_full_unstemmed Roughening kinetics of chemical vapor deposited copper films on Si(100)
title_sort roughening kinetics of chemical vapor deposited copper films on si(100)
publishDate 1996
url http://sedici.unlp.edu.ar/handle/10915/126508
https://aip.scitation.org/doi/10.1063/1.115954
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