Experimental determination of multiple ionization cross sections in Si by electron impact

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The thin sample method is often used to experimentally determine ionization cross sections, specially when focusing on the low overvoltage region. The simplicity of the formalism involved in this method is very appealing, but some experimental complications arise in the preparation of thin films. In...

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Autores principales: Pérez, Pablo Daniel, Sepúlveda, Andrés, Castellano, Gustavo, Trincavelli, Jorge
Formato: article
Lenguaje:Inglés
Publicado: 2022
Materias:
Inner-shell ionization
X-ray emission
Spectral processing
Transition rates
Acceso en línea:http://hdl.handle.net/11086/23708
Aporte de:
Repositorio Digital Universitario (UNC) de Universidad Nacional de Córdoba
id I10-R14111086-23708
record_format dspace
institution Universidad Nacional de Córdoba
institution_str I-10
repository_str R-141
collection Repositorio Digital Universitario (UNC)
language Inglés
topic Inner-shell ionization
X-ray emission
Spectral processing
Transition rates
spellingShingle Inner-shell ionization
X-ray emission
Spectral processing
Transition rates
Pérez, Pablo Daniel
Sepúlveda, Andrés
Castellano, Gustavo
Trincavelli, Jorge
Experimental determination of multiple ionization cross sections in Si by electron impact
topic_facet Inner-shell ionization
X-ray emission
Spectral processing
Transition rates
description The thin sample method is often used to experimentally determine ionization cross sections, specially when focusing on the low overvoltage region. The simplicity of the formalism involved in this method is very appealing, but some experimental complications arise in the preparation of thin films. In this work, a thick sample method was used to measure the Si-K x-ray production cross section by electron impact. The good agreement between the results obtained and the values reported in the literature validates the method and the parameters used. The advantages and disadvantages of the method are discussed and its application is extended to the determination of Si multiple ionization cross sections, where the very low emission rates (around two orders of magnitude lower than the single ionization case) make the use of the thin sample method impracticable.
format article
author Pérez, Pablo Daniel
Sepúlveda, Andrés
Castellano, Gustavo
Trincavelli, Jorge
author_facet Pérez, Pablo Daniel
Sepúlveda, Andrés
Castellano, Gustavo
Trincavelli, Jorge
author_sort Pérez, Pablo Daniel
title Experimental determination of multiple ionization cross sections in Si by electron impact
title_short Experimental determination of multiple ionization cross sections in Si by electron impact
title_full Experimental determination of multiple ionization cross sections in Si by electron impact
title_fullStr Experimental determination of multiple ionization cross sections in Si by electron impact
title_full_unstemmed Experimental determination of multiple ionization cross sections in Si by electron impact
title_sort experimental determination of multiple ionization cross sections in si by electron impact
publishDate 2022
url http://hdl.handle.net/11086/23708
work_keys_str_mv AT perezpablodaniel experimentaldeterminationofmultipleionizationcrosssectionsinsibyelectronimpact
AT sepulvedaandres experimentaldeterminationofmultipleionizationcrosssectionsinsibyelectronimpact
AT castellanogustavo experimentaldeterminationofmultipleionizationcrosssectionsinsibyelectronimpact
AT trincavellijorge experimentaldeterminationofmultipleionizationcrosssectionsinsibyelectronimpact
bdutipo_str Repositorios
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