MOS memory. Data book /
Guardado en:
| Autor Corporativo: | |
|---|---|
| Formato: | Libro |
| Lenguaje: | Inglés |
| Publicado: |
USA :
Texas Instruments,
c1995
|
| Materias: | |
| Aporte de: | Registro referencial: Solicitar el recurso aquí |
| LEADER | 00585nam a2200241a 44500 | ||
|---|---|---|---|
| 001 | UBP05309 | ||
| 003 | AR-CdUBP | ||
| 005 | 20220310153155.0 | ||
| 008 | 151212suuuu#######|||||||||||||||||eng|d | ||
| 040 | |a AR-CdUBP |b spa | ||
| 041 | |a eng | ||
| 110 | |a Texas Instruments | ||
| 245 | 1 | 0 | |a MOS memory. Data book / |c Texas Instruments |
| 260 | |a USA : |b Texas Instruments, |c c1995 | ||
| 300 | |a pag. var. ; |c 22 cm. | ||
| 650 | 4 | |a DRAMS | |
| 650 | 4 | |a SIMMS | |
| 650 | 4 | |a MOS | |
| 931 | |a 05309 |b UBP | ||
| 942 | |2 cdu |c BK | ||
| 945 | |a SMM | ||
| 984 | |a 621.315.59 |b T312m 1995 | ||
| 999 | |c 20867 |d 20867 | ||