Retentivity of RRAM devices based on metal/YBCO interfaces
The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. I...
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| Formato: | Acta de conferencia Capítulo de libro |
| Lenguaje: | Inglés |
| Publicado: |
2011
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| Acceso en línea: | Registro en Scopus DOI Handle Registro en la Biblioteca Digital |
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| LEADER | 05274caa a22007217a 4500 | ||
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| 001 | PAPER-9987 | ||
| 003 | AR-BaUEN | ||
| 005 | 20230518203959.0 | ||
| 008 | 190411s2011 xx ||||fo|||| 10| 0 eng|d | ||
| 024 | 7 | |2 scopus |a 2-s2.0-84455190812 | |
| 040 | |a Scopus |b spa |c AR-BaUEN |d AR-BaUEN | ||
| 030 | |a MRSPD | ||
| 100 | 1 | |a Schulman, A. | |
| 245 | 1 | 0 | |a Retentivity of RRAM devices based on metal/YBCO interfaces |
| 260 | |c 2011 | ||
| 270 | 1 | 0 | |m Schulman, A.; Departamento de Física, FCEyN, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina |
| 506 | |2 openaire |e Política editorial | ||
| 504 | |a Burr, G.W., Kurdi, B.N., Scott, J.C., Lam, C.H., Gopalakrishnan, K., Shenoy, R.S., (2008) IBM J. Res. & Dev., 52, p. 449 | ||
| 504 | |a Waser, R., Aono, M., (2007) Nature Materials, 6, p. 833 | ||
| 504 | |a Sawa, A., (2008) Materials Today, 11, p. 28 | ||
| 504 | |a Porcar, L., Bourgault, D., Tournier, R., Barbut, J.M., Barrault, M., Germi, P., (1997) Physica C, 275, p. 1997 | ||
| 504 | |a Acha, C., Rozenberg, M.J., (2009) J. Phys.: Condens, Matter, 21, p. 045702 | ||
| 504 | |a Acha, C., (2009) Physica B, 404, p. 2746 | ||
| 504 | |a Nian, Y.B., Strozier, J., Wu, N.J., Chen, X., Ignatiev, A., (2007) Phys. Rev. Lett., 98, p. 146403 | ||
| 504 | |a Avrami, M., (1940) J. Chem. Phys., 8, p. 212 | ||
| 504 | |a http://en.wikipedia.org/wiki/List_of_fractals_by_Hausdorff_dimension, See, for example; Li, T., Zhang, X.H., Zhu, Y.G., Huang, X., Han, L.F., Shang, X.J., Ni, H.Q., Niu, Z.C., (2010) Physica E, 42, p. 1597 | ||
| 520 | 3 | |a The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non - volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. In this study we examine RRAM devices based on metal / YBCO interfaces in order to comprehend the physics beneath the resistive switching phenomenon. Our experimental results show that after producing the switching of the resistance from a low to a high state, or vice versa, the resistance evolves to its previous state in a small but noticeable percentage. We have measured long relaxation effects on the resistance state of devices composed by metal (Au, Pt) / ceramic YBCO interfaces in the temperature range 77 K - 300 K. This time relaxation can be described by a stretched exponential law that is characterized by a power exponent n = 0.5, which is temperature independent, and by a relaxation time τ that increases with increasing the temperature. These characteristics point out to a non-thermally assisted diffusion process that could be associated with oxygen (or vacancy) migration and that produces the growth of a conducting (or insulating) fractal structure. © 2011 Materials Research Society. |l eng | |
| 536 | |a Detalles de la financiación: UBACyT X166, PIP 112-200801-00930 | ||
| 536 | |a Detalles de la financiación: We would like to acknowledge financial support by CONICET PIP 112-200801-00930, UBACyT X166 and CONICET-DUPONT 2010 "Memosat" Grants. We acknowledge fruitful discussions with V. Bekeris, G. Lozano, P. Levy and M. J. Sánchez and technical assistance from D. Giménez, E. Pérez Wodtke and D. Rodríguez Melgarejo. | ||
| 593 | |a Departamento de Física, FCEyN, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina | ||
| 593 | |a IFOBA, CONICET, Argentina | ||
| 690 | 1 | 0 | |a CHARACTERISTICS POINTS |
| 690 | 1 | 0 | |a DIFFUSION PROCESS |
| 690 | 1 | 0 | |a FRACTAL STRUCTURES |
| 690 | 1 | 0 | |a INFORMATION STATE |
| 690 | 1 | 0 | |a KEY PARAMETERS |
| 690 | 1 | 0 | |a POWER EXPONENT |
| 690 | 1 | 0 | |a RELAXATION EFFECT |
| 690 | 1 | 0 | |a RESISTANCE STATE |
| 690 | 1 | 0 | |a RESISTIVE STATE |
| 690 | 1 | 0 | |a RESISTIVE SWITCHING |
| 690 | 1 | 0 | |a RETENTION TIME |
| 690 | 1 | 0 | |a STRETCHED EXPONENTIAL LAW |
| 690 | 1 | 0 | |a TEMPERATURE RANGE |
| 690 | 1 | 0 | |a VOLATILE MEMORY |
| 690 | 1 | 0 | |a FUNCTIONAL MATERIALS |
| 690 | 1 | 0 | |a INTERFACES (MATERIALS) |
| 690 | 1 | 0 | |a MEMORY ARCHITECTURE |
| 690 | 1 | 0 | |a PLATINUM |
| 690 | 1 | 0 | |a RANDOM ACCESS STORAGE |
| 690 | 1 | 0 | |a TREES (MATHEMATICS) |
| 690 | 1 | 0 | |a YTTRIUM BARIUM COPPER OXIDES |
| 690 | 1 | 0 | |a EQUIPMENT |
| 700 | 1 | |a Acha, C. | |
| 711 | 2 | |c San Francisco, CA |d 25 April 2011 through 29 April 2011 |g Código de la conferencia: 87784 | |
| 773 | 0 | |d 2011 |g v. 1337 |h pp. 103-107 |p Mater Res Soc Symp Proc |n Materials Research Society Symposium Proceedings |x 02729172 |z 9781605113142 |t 2011 MRS Spring Meeting | |
| 856 | 4 | 1 | |u https://www.scopus.com/inward/record.uri?eid=2-s2.0-84455190812&doi=10.1557%2fopl.2011.987&partnerID=40&md5=bf4f537ea81e175261d082878b3552d5 |y Registro en Scopus |
| 856 | 4 | 0 | |u https://doi.org/10.1557/opl.2011.987 |y DOI |
| 856 | 4 | 0 | |u https://hdl.handle.net/20.500.12110/paper_02729172_v1337_n_p103_Schulman |y Handle |
| 856 | 4 | 0 | |u https://bibliotecadigital.exactas.uba.ar/collection/paper/document/paper_02729172_v1337_n_p103_Schulman |y Registro en la Biblioteca Digital |
| 961 | |a paper_02729172_v1337_n_p103_Schulman |b paper |c PE | ||
| 962 | |a info:eu-repo/semantics/conferenceObject |a info:ar-repo/semantics/documento de conferencia |b info:eu-repo/semantics/publishedVersion | ||
| 999 | |c 70940 | ||