Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling

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We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are sh...

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Autor principal: Intronati, G.A
Otros Autores: Tamborenea, P.I, Weinmann, D., Jalabert, R.A
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: 2012
Acceso en línea:Registro en Scopus
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Biblioteca Central Dr. Luis F. Leloir (FCEN) de Universidad de Buenos Aires
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100 1 |a Intronati, G.A. 
245 1 0 |a Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling 
260 |c 2012 
270 1 0 |m Intronati, G.A.; Departamento de Física, FCEN, Universidad de Buenos Aires, C1428EHA Buenos Aires, Argentina 
506 |2 openaire  |e Política editorial 
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520 3 |a We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived and incorporated into a tight-binding model of impurity sites, and they are shown to unexpectedly dominate the spin relaxation, leading to spin-relaxation times in good agreement with experimental values. This conclusion is drawn from two complementary approaches: an analytical diffusive-evolution calculation and a numerical finite-size scaling study of the spin-relaxation time. © 2012 American Physical Society.  |l eng 
593 |a Departamento de Física, FCEN, Universidad de Buenos Aires, C1428EHA Buenos Aires, Argentina 
593 |a Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, CNRS-UdS, 23 rue du Loess, 67034 Strasbourg Cedex 2, France 
593 |a Service de Physique de l'Itat Condensé, CNRS URA 2464, CEA Saclay, 91191 Gif-sur-Yvette, France 
690 1 0 |a EXPERIMENTAL VALUES 
690 1 0 |a FINITE SIZE SCALING 
690 1 0 |a HOPPING TERMS 
690 1 0 |a IMPURITY BANDS 
690 1 0 |a N-DOPED 
690 1 0 |a SPIN RELAXATION 
690 1 0 |a SPIN-ORBIT COUPLINGS 
690 1 0 |a TIGHT BINDING MODEL 
690 1 0 |a ZINCBLENDE SEMICONDUCTORS 
690 1 0 |a BINDING SITES 
690 1 0 |a METAL INSULATOR BOUNDARIES 
690 1 0 |a SEMICONDUCTOR INSULATOR BOUNDARIES 
690 1 0 |a METAL INSULATOR TRANSITION 
700 1 |a Tamborenea, P.I. 
700 1 |a Weinmann, D. 
700 1 |a Jalabert, R.A. 
773 0 |d 2012  |g v. 108  |k n. 1  |p Phys Rev Lett  |x 00319007  |w (AR-BaUEN)CENRE-386  |t Physical Review Letters 
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