Mechanism for bipolar resistive switching in transition-metal oxides

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We introduce a model that accounts for the bipolar resistive switching phenomenon observed in transition-metal oxides. It qualitatively describes the electric-field-enhanced migration of oxygen vacancies at the nanoscale. The numerical study of the model predicts that strong electric fields develop...

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Autor principal: Rozenberg, M.J
Otros Autores: Sánchez, M.J, Weht, Rubén Oscar, Acha, C., Gomez-Marlasca, F., Levy, P.
Formato: Capítulo de libro
Lenguaje:Inglés
Publicado: 2010
Acceso en línea:Registro en Scopus
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100 1 |a Rozenberg, M.J. 
245 1 0 |a Mechanism for bipolar resistive switching in transition-metal oxides 
260 |c 2010 
270 1 0 |m Rozenberg, M. J.; Laboratoire de Physique des Solides, UMR 8502, Université Paris-Sud, Orsay 91405, France 
504 |a Meijer, G.I., Materials science: Who wins the nonvolatile memory race? (2008) Science, 319 (5870), pp. 1625-1626. , DOI 10.1126/science.1153909 
504 |a Waser, R., Aono, M., Nanoionics-based resistive switching memories (2007) Nature Materials, 6 (11), pp. 833-840. , DOI 10.1038/nmat2023, PII NMAT2023 
504 |a Sawa, A., Resistive switching in transition metal oxides (2008) Materials Today, 11 (6), pp. 28-36. , DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196 
504 |a Janousch, M., Meijer, G.I., Staub, U., Delley, B., Karg, S.E., Andreasson, B.P., Role of oxygen vacancies in cr-doped SrTiO3 for resistance-change memory (2007) Advanced Materials, 19 (17), pp. 2232-2235. , DOI 10.1002/adma.200602915 
504 |a Szot, K., Speier, W., Bihlmayer, G., Waser, R., (2006) Nature Mater., 5, p. 312. , 10.1038/nmat1614 
504 |a Inoue, I.H., Yasuda, S., Akinaga, H., Takagi, H., (2008) Phys. Rev. B, 77, p. 035105. , 10.1103/PhysRevB.77.035105 
504 |a Fujiwara, K., Nemoto, T., Rozenberg, M.J., Nakamura, Y., Takagi, H., (2008) Jpn. J. Appl. Phys., 47, p. 6266. , 10.1143/JJAP.47.6266 
504 |a Baek, I.G., Lee, M.S., Seo, S., Lee, M.J., Seo, D.H., Suh, D.-S., Park, J.C., Moon, J.T., Tech. Dig.-Int. Electron Devices Meet., 2004, p. 587. , 10.1109/IEDM.2004.1419228 
504 |a Liu, S.Q., Wu, N.J., Ignatiev, A., (2000) Appl. Phys. Lett., 76, p. 2749. , 10.1063/1.126464 
504 |a Beck, A., Bednorz, J.G., Gerber, Ch., Rossel, C., Widmer, D., (2000) Appl. Phys. Lett., 77, p. 139. , 10.1063/1.126902 
504 |a Watanabe, Y., Bednorz, J.G., Bietsch, A., Gerber, Ch., Widmer, D., Beck, A., Wind, S.J., (2001) Appl. Phys. Lett., 78, p. 3738. , 10.1063/1.1377617 
504 |a Choi, B.J., Jeong, D.S., Kim, S.K., Rohde, C., Choi, S., Oh, J.H., Kim, H.J., Tiedke, S., Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition (2005) Journal of Applied Physics, 98 (3), pp. 1-10. , DOI 10.1063/1.2001146, 033715 
504 |a Baikalov, A., Wang, Y.Q., Shen, B., Lorenz, B., Tsui, S., Sun, Y.Y., Xue, Y.Y., Chu, C.W., (2003) Appl. Phys. Lett., 83, p. 957. , 10.1063/1.1590741 
504 |a Nian, Y.B., Strozier, J., Wu, N.J., Chen, X., Ignatiev, A., Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides (2007) Physical Review Letters, 98 (14), p. 146403. , http://oai.aps.org/oai?verb=GetRecord&Identifier=oai:aps.org: PhysRevLett.98.146403&metadataPrefix=oai_apsmeta_2, DOI 10.1103/PhysRevLett.98.146403 
504 |a Tulina, N.A., Zver'Kov, S.A., Mukovskii, Y.M., Shulyatev, D.A., (2001) Europhys. Lett., 56, p. 836. , 10.1209/epl/i2001-00595-4; 
504 |a Tulina, N.A., Colossal electroresistance and electron instability in strongly correlated electron systems (2007) Physics-Uspekhi, 50 (11), pp. 1171-1178. , DOI 10.1070/PU2007v050n11ABEH006396 
504 |a Rozenberg, M.J., Inoue, I.H., Sánchez, M.J., (2004) Phys. Rev. Lett., 92, p. 178302. , 10.1103/PhysRevLett.92.178302 
504 |a Jeong, D.S., Schroeder, H., Waser, R., (2009) Phys. Rev. B, 79, p. 195317. , 10.1103/PhysRevB.79.195317 
504 |a Seong, D.-J., Jo, M., Lee, D., Hwang, H., HPHA effect on reversible resistive switching of Pt/Nb-doped SrTiO 3 Schottky junction for nonvolatile memory application (2007) Electrochemical and Solid-State Letters, 10 (6), pp. 168-170. , DOI 10.1149/1.2718396 
504 |a Tsui, S., Baikalov, A., Cmaidalka, J., Sun, Y.Y., Wang, Y.Q., Xue, Y.Y., Chu, C.W., Jacobson, A.J., (2004) Appl. Phys. Lett., 85, p. 317. , 10.1063/1.1768305 
504 |a Chen, X., Wu, N.J., Strozier, J., Ignatiev, A., Direct resistance profile for an electrical pulse induced resistance change device (2005) Applied Physics Letters, 87 (23), pp. 1-3. , DOI 10.1063/1.2139843, 233506 
504 |a Quintero, M., Levy, P., Leyva, A.G., Rozenberg, M.J., (2007) Phys. Rev. Lett., 98, p. 116601. , 10.1103/PhysRevLett.98.116601; 
504 |a Gomez-Marlasca, F., Levy, P., (2009) J. Phys.: Conf. Ser., 167, p. 012036. , 10.1088/1742-6596/167/1/012036 
504 |a Sawa, A., Fujii, T., Kawasaki, M., Tokura, Y., (2004) Appl. Phys. Lett., 85, p. 4073. , 10.1063/1.1812580 
504 |a Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., Tokura, Y., Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3/SrTi0.99Nb0.01O3 (2005) Applied Physics Letters, 86 (1), pp. 0121071-0121073. , DOI 10.1063/1.1845598, 012107 
504 |a Ignatiev, A., Wu, N.J., Chen, X., Nian, Y.B., Papagianni, C., Liu, S.Q., Strozier, J., (2008) Phase Transitions, 81, p. 791. , 10.1080/01411590802212374 
504 |a Acha, C., Rozenberg, M.J., (2009) J. Phys.: Condens. Matter, 21, p. 045702. , 10.1088/0953-8984/21/4/045702; 
504 |a Acha, C., (2009) Physica B: Condens. Matter, 404, p. 2746. , 10.1016/j.physb.2009.06.111 
506 |2 openaire  |e Política editorial 
520 3 |a We introduce a model that accounts for the bipolar resistive switching phenomenon observed in transition-metal oxides. It qualitatively describes the electric-field-enhanced migration of oxygen vacancies at the nanoscale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces leading to spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce nontrivial resistance hysteresis experiments that we also report providing key validation to our model. © 2010 The American Physical Society.  |l eng 
593 |a Laboratoire de Physique des Solides, UMR 8502, Université Paris-Sud, Orsay 91405, France 
593 |a Departamento de Física J. J. Giambiagi, FCEN, Ciudad Universitaria Pab. i, 1428 Buenos Aires, Argentina 
593 |a Centro Atómico Bariloche, Instituto Balseiro, CNEA, 8400 San Carlos de Bariloche, Argentina 
593 |a Gerencia de Investigación y Aplicaciones, CNEA, 1650 San Martín, Argentina 
593 |a Instituto Sabato, Universidad Nacional de San Martín-CNEA, 1650 San Martín, Argentina 
700 1 |a Sánchez, M.J. 
700 1 |a Weht, Rubén Oscar 
700 1 |a Acha, C. 
700 1 |a Gomez-Marlasca, F. 
700 1 |a Levy, P. 
773 0 |d 2010  |g v. 81  |k n. 11  |p Phys. Rev. B Condens. Matter Mater. Phys.  |x 10980121  |t Physical Review B - Condensed Matter and Materials Physics 
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